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2N6052 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. 2N6052
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6052 Datasheet(HTML) 3 Page - ON Semiconductor

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2N6052
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3
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.01
0.5
0.2
0.1
0.05
0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
1000
500
RθJC(t) = r(t) RθJC
RθJC = 1.17°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.2
0.05
0.02
0.01
SINGLE
PULSE
0.1
0.7
0.3
0.07
0.03
0.02
0.03
0.3
3.0
30
300
ACTIVE–REGION SAFE OPERATING AREA
Figure 5. 2N6058
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 6. 2N6052, 2N6059
VCE, COLLECTOR-EMITTER VOLTAGE
(VOLTS)
50
10
20
10
5.0
2.0
0.05
50
100
70
1.0
0.5
0.1
0.2
20
30
50
10
20
10
5.0
2.0
0.05
50
100
70
1.0
0.5
0.1
0.2
20
30
TJ = 200°C
SECOND BREAKDOWN LIM
ITED
0.1 ms
0.5 ms
1.0 ms
5.0 ms
d
c
0.1 ms
0.5 ms
TJ = 200°C
1.0 ms
5.0 ms
d
c
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION
@TC = 25°C (SINGLE PULSE)
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5, 6, and 7 is based on TJ(pk) = 200
_C;
TC is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C; TJ(pk) may be calculated from the data in Figure
4. At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.


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