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2N6052 Datasheet(PDF) 2 Page - ON Semiconductor

Part No. 2N6052
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6052 Datasheet(HTML) 2 Page - ON Semiconductor

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2N6052
http://onsemi.com
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*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (2)
(IC = 100 mAdc, IB = 0)
2N6058
2N6052, 2N6059
VCEO(sus)
80
100
Vdc
Collector Cutoff Current
(VCE = 40 Vdc, IB = 0)
2N6058
(VCE = 50 Vdc, IB = 0)
2N6052, 2N6059
ICEO
1.0
1.0
mAdc
Collector Cutoff Current
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc)
(VCE = Rated VCEO, VBE(off) = 1.5 Vdc, TC = 150_C)
ICEX
0.5
5.0
mAdc
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
IEBO
2.0
mAdc
ON CHARACTERISTICS (2)
DC Current Gain
(IC = 6.0 Adc, VCE = 3.0 Vdc)
(IC = 12 Adc, VCE = 3.0 Vdc)
hFE
750
100
18,000
Collector–Emitter Saturation Voltage
(IC = 6.0 Adc, IB = 24 mAdc)
(IC = 12 Adc, IB = 120 mAdc)
VCE(sat)
2.0
3.0
Vdc
Base–Emitter Saturation Voltage
(IC = 12 Adc, IB = 120 mAdc)
VBE(sat)
4.0
Vdc
Base–Emitter On Voltage
(IC = 6.0 Adc, VCE = 3.0 Vdc)
VBE(on)
2.8
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small–Signal Short Circuit Forward
Current Transfer Ratio
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
|hfe|
4.0
MHz
Output Capacitance
2N6052
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
2N6058/2N6059
Cob
500
300
pF
Small–Signal Current Gain
(IC = 5.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)
hfe
300
*Indicates JEDEC Registered Data.
(2) Pulse test: Pulse Width = 300
µs, Duty Cycle = 2.0%.
Figure 2. Switching Times Test Circuit
10
0.2
Figure 3. Switching Times
IC, COLLECTOR CURRENT (AMP)
5.0
0.1
0.5
1.0
3.0
20
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
1.0
2.0
2N6052
2N6059
tf
tr
ts
td @ VBE(off) = 0
V2
approx
+8.0 V
V1
approx
-8.0 V
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
25 µs
0
RB
51
D1
+4.0 V
VCC
-30 V
RC
TUT
≈ 5.0 k ≈ 50
SCOPE
for td and tr, D1 is disconnected
and V2 = 0
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1 MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
0.5
0.2
5.0
10
For NPN test circuit reverse diode and voltage polarities.


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