Electronic Components Datasheet Search
  English  ▼

Delete All
ON OFF
ALLDATASHEET.COM

X  

Preview PDF Download HTML

2N6052 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N6052
Description  DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

2N6052 Datasheet(HTML) 1 Page - ON Semiconductor

  2N6052 Datasheet HTML 1Page - ON Semiconductor 2N6052 Datasheet HTML 2Page - ON Semiconductor 2N6052 Datasheet HTML 3Page - ON Semiconductor 2N6052 Datasheet HTML 4Page - ON Semiconductor 2N6052 Datasheet HTML 5Page - ON Semiconductor 2N6052 Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
Darlington Complementary
Silicon Power Transistors
. . . designed for general–purpose amplifier and low frequency
switching applications.
High DC Current Gain —
hFE = 3500 (Typ) @ IC = 5.0 Adc
Collector–Emitter Sustaining Voltage — @ 100 mA
VCEO(sus) = 80 Vdc (Min) — 2N6058
100 Vdc (Min) — 2N6052, 2N6059
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
2N6058
2N6052
2N6059
Unit
Collector–Emitter Voltage
VCEO
80
100
Vdc
Collector–Base Voltage
VCB
80
100
Vdc
Emitter–Base voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak
IC
12
20
Adc
Base Current
IB
0.2
Adc
Total Device Dissipation
@TC = 25_C
Derate above 25
_C
PD
150
0.857
Watts
W/
_C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–65 to +200
_C
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Rating
Unit
Thermal Resistance, Junction to Case
RθJC
1.17
_C/W
(1) Indicates JEDEC Registered Data.
160
0
0
25
50
75
100
125
150
200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
120
100
140
175
80
40
20
60
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
1
Publication Order Number:
2N6052/D
2N6052
2N6058
2N6059
*ON Semiconductor Preferred Device
DARLINGTON
12 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
80–100 VOLTS
150 WATTS
*
*
CASE 1–07
TO–204AA
(TO–3)
PNP
NPN


Html Pages

1  2  3  4  5  6 


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn