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2N6040 Datasheet(PDF) 2 Page - ON Semiconductor |
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2N6040 Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 6 page 2N6040 2N6042 2N6043 2N6045 http://onsemi.com 2 *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector–Emitter Sustaining Voltage (IC = 100 mAdc, IB = 0) 2N6040, 2N6043 2N6042, 2N6045 VCEO(sus) 60 100 – – Vdc Collector Cutoff Current (VCE = 60 Vdc, IB = 0) 2N6040, 2N6043 (VCE = 100 Vdc, IB = 0) 2N6042, 2N6045 ICEO – – 20 20 µA Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N6040, 2N6043 (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) 2N6042, 2N6045 (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) 2N6040, 2N6043 (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) 2N6041, 2N6044 (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C) 2N6042, 2N6045 ICEX – – – – – 20 20 200 200 200 µA Collector Cutoff Current (VCB = 60 Vdc, IE = 0) 2N6040, 2N6043 (VCB = 100 Vdc, IE = 0) 2N6042, 2N6045 ICBO – – 20 20 µA Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO – 2.0 mAdc ON CHARACTERISTICS DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) 2N6040, 2N6043, (IC = 3.0 Adc, VCE = 4.0 Vdc) 2N6042, 2N6045 (IC = 8.0 Adc, VCE = 4.0 Vdc) All Types hFE 1000 1000 100 20.000 20,000 – – Collector–Emitter Saturation Voltage (IC = 4.0 Adc, IB = 16 mAdc) 2N6040, 2N6043, (IC = 3.0 Adc, IB = 12 mAdc) 2N6042, 2N6045 (IC = 8.0 Adc, IB = 80 Adc) All Types VCE(sat) – – – 2.0 2.0 4.0 Vdc Base–Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) VBE(sat) – 4.5 Vdc Base–Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) VBE(on) – 2.8 Vdc DYNAMIC CHARACTERISTICS Small Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 MHz) |hfe| 4.0 – Output Capacitance 2N6040/2N6042 (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) 2N6043/2N6045 Cob – – 300 200 pF Small–Signal Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) hfe 300 – – *Indicates JEDEC Registered Data. Figure 2. Switching Times Equivalent Circuit 5.0 0.1 Figure 3. Switching Times IC, COLLECTOR CURRENT (AMP) 2.0 1.0 0.5 0.05 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 0.3 0.7 tf tr ts td @ VBE(off) = 0 V V2 approx +8.0 V V1 approx -12 V tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 25 µs 0 RB 51 D1 +4.0 V VCC -30 V RC TUT ≈ 8.0 k ≈ 120 SCOPE for td and tr, D1 is disconnected and V2 = 0 For NPN test circuit reverse all polarities and D1. RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB ≈ 100 mA MSD6100 USED BELOW IB ≈ 100 mA 3.0 0.2 0.1 0.07 5.0 7.0 VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25°C PNP NPN |
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