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2N6040 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N6040
Description  COMPLEMENTARY SILICON POWER TRANSISTORS
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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2N6040 Datasheet(HTML) 1 Page - ON Semiconductor

   
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Plastic Medium-Power
Complementary Silicon
Transistors
. . . designed for general–purpose amplifier and low–speed
switching applications.
High DC Current Gain –
hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector–Emitter Sustaining Voltage – @ 100 mAdc –
VCEO(sus) = 60 Vdc (Min) – 2N6040, 2N6043
= 100 Vdc (Min) – 2N6042, 2N6045
Low Collector–Emitter Saturation Voltage –
VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc – 2N6043,44
= 2.0 Vdc (Max) @ IC = 3.0 Adc – 2N6042, 2N6045
Monolithic Construction with Built–In Base–Emitter Shunt Resistors
MAXIMUM RATINGS (1)
Rating
Symbol
2N6040
2N6043
2N6042
2N6045
Unit
Collector–Emitter Voltage
VCEO
60
100
Vdc
Collector–Base Voltage
VCB
60
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current – Continuous
Peak
IC
8.0
16
Adc
Base Current
IB
120
mAdc
Total Power Dissipation @ TC = 25_C
Derate above 25
_C
PD
75
0.60
Watts
W/
_C
Operating and Storage Junction,
Temperature Range
TJ, Tstg
–65 to +150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
θJC
1.67
_C/W
Thermal Resistance, Junction to Ambient
θJA
57
_C/W
(1) Indicates JEDEC Registered Data.
80
0
0
20
40
60
80
100
120
160
Figure 1. Power Derating
T, TEMPERATURE (°C)
40
20
60
140
TC
4.0
0
2.0
1.0
3.0
TA
TA
TC
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor)
© Semiconductor Components Industries, LLC, 2002
April, 2002 – Rev. 4
1
Publication Order Number:
2N6040/D
2N6040
2N6042
2N6043
2N6045
*ON Semiconductor Preferred Device
DARLINGTON
8 AMPERE
COMPLEMENTARY
SILICON
POWER TRANSISTORS
60–100 VOLTS
75 WATTS
*
*
CASE 221A–09
TO–220AB
PNP
NPN
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4


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