2N5655 2N5657

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2

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage

2N5655

(IC = 100 mAdc (inductive), L = 50 mH)

2N5657

VCEO(sus)

250

350

–

–

Vdc

Collector–Emitter Breakdown Voltage

2N5655

(IC = 1.0 mAdc, IB = 0)

2N5657

V(BR)CEO

250

350

–

–

Vdc

Collector Cutoff Current

(VCE = 150 Vdc, IB = 0)

2N5655

(VCE = 250 Vdc, IB = 0)

2N5657

ICEO

–

–

0.1

0.1

mAdc

Collector Cutoff Current

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc)

2N5655

(VCE = 350 Vdc, VEB(off) = 1.5 Vdc)

2N5657

(VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)

2N5655

(VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C)

2N5657

ICEX

–

–

–

–

0.1

0.1

1.0

1.0

mAdc

Collector Cutoff Current

(VCB = 275 Vdc, IE = 0)

2N5655

(VCB = 375 Vdc, IE = 0)

2N5657

ICBO

–

–

10

10

µAdc

Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0)

IEBO

–

10

µAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 50 mAdc, VCE = 10 Vdc)

(IC = 100 mAdc, VCE = 10 Vdc)

(IC = 250 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE

25

30

15

5.0

–

250

–

–

–

Collector–Emitter Saturation Voltage (1)

(IC = 100 mAdc, IB = 10 mAdc)

(IC = 250 mAdc, IB = 25 mAdc)

(IC = 500 mAdc, IB = 100 mAdc)

VCE(sat)

–

–

–

1.0

2.5

10

Vdc

Base–Emitter Voltage (1)

(IC = 100 mAdc, VCE = 10 Vdc)

VBE

–

1.0

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain – Bandwidth Product (2)

(IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz)

fT

10

–

MHz

Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz)

Cob

–

25

pF

Small–Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz)

hfe

20

–

–

*Indicates JEDEC Registered Data for 2N5655 Series.

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 2.0%.

(2) fT is defined as the frequency at which |hfe| extrapolates to unity.

1.0

20

Figure 3. Active–Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.5

0.2

0.1

0.01

30 40

60

100

200

300 400

600

Second Breakdown Limit

Thermal Limit @ TC = 25°C

Bonding Wire Limit

Curves apply below rated VCEO

TJ = 150°C

d

c

1.0 ms

0.05

0.02

10

µs

2N5655

2N5657

500

µs

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 3 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. At high case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.