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4N29 Datasheet(PDF) 1 Page - Fairchild Semiconductor |
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4N29 Datasheet(HTML) 1 Page - Fairchild Semiconductor |
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DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS 4N29 4N30 4N31 4N32 4N33 APPLICATIONS • Low power logic circuits • Telecommunications equipment • Portable electronics • Solid state relays • Interfacing coupling systems of different potentials and impedances. Parameter Symbol Value Units TOTAL DEVICE TSTG -55 to +150 °C Storage Temperature Operating Temperature TOPR -55 to +100 °C Lead Solder Temperature TSOL 260 for 10 sec °C Total Device Power Dissipation @ TA = 25°C PD 250 mW Derate above 25°C 3.3 mW/°C EMITTER IF 80 mA Continuous Forward Current Reverse Voltage VR 3V Forward Current - Peak (300 µs, 2% Duty Cycle) IF(pk) 3.0 A LED Power Dissipation @ TA = 25°C PD 150 mW Derate above 25°C 2.0 mW/°C DETECTOR BVCEO 30 V Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage BVCBO 30 V Emitter-Collector Breakdown Voltage BVECO 5V Detector Power Dissipation @ TA = 25°C PD 150 mW Derate above 25°C 2.0 mW/°C Continuous Collector Current IC 150 mA 4/25/00 200038B FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 approval available as a test option -add option .300. (e.g., 4N29.300) EMITTER COLLECTOR 1 2 3 ANODE CATHODE 4 5 6 BASE N/C SCHEMATIC ABSOLUTE MAXIMUM RATINGS (T A = 25°C Unless otherwise specified.) |
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