SI7941DP datasheet(2/3 Pages) VISHAY | Dual P-Channel 30-V (D-S) MOSFET

Part No.	SI7941DP

Description	Dual P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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SPICE Device Model Si7941DP

Vishay Siliconix

www.vishay.com

Document Number: 71669

2

31-May-04

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Simulated

Data

Measured

Data

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = − 250 µA

1.9

V

On-State Drain Current

a

ID(on)

VDS = −5 V, VGS = −10 V

205

A

VGS = −10 V, ID = −9 A

0.022

Drain-Source On-State Resistance

a

rDS(on)

VGS = −4.5 V, ID = −5 A

0.033

0.032

Ω

Forward Transconductance

a

gfs

VDS = −15 V, ID = −2.5 A

10

14

S

Diode Forward Voltage

a

VSD

IS = −2.9 A, VGS = 0 V

−0.82

−0.80

V

Dynamic

b

Total Gate Charge

Qg

41

42

Gate-Source Charge

Qgs

8.5

Gate-Drain Charge

Qgd

VDS = −15 V, VGS = −10 V, ID = −9 A

7.5

nC

Turn-On Delay Time

td(on)

20

18

Rise Time

tr

28

29

Turn-Off Delay Time

td(off)

32

65

Fall Time

tf

VDD = −15 V, RL = 15 Ω

ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω

58

27

Source-Drain Reverse Recovery Time

trr

IF = −2.9 A, di/dt = 100 A/µs

40

50

ns

Notes

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

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