 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
SI7941DP Datasheet(PDF) 2 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
SI7941DP Datasheet(HTML) 2 Page - Vishay Siliconix |
|
|
2 / 3 page 
SPICE Device Model Si7941DP Vishay Siliconix www.vishay.com Document Number: 71669 2 31-May-04 SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Simulated Data Measured Data Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = − 250 µA 1.9 V On-State Drain Current a ID(on) VDS = −5 V, VGS = −10 V 205 A VGS = −10 V, ID = −9 A 0.022 0.022 Drain-Source On-State Resistance a rDS(on) VGS = −4.5 V, ID = −5 A 0.033 0.032 Ω Forward Transconductance a gfs VDS = −15 V, ID = −2.5 A 10 14 S Diode Forward Voltage a VSD IS = −2.9 A, VGS = 0 V −0.82 −0.80 V Dynamic b Total Gate Charge Qg 41 42 Gate-Source Charge Qgs 8.5 8.5 Gate-Drain Charge Qgd VDS = −15 V, VGS = −10 V, ID = −9 A 7.5 7.5 nC Turn-On Delay Time td(on) 20 18 Rise Time tr 28 29 Turn-Off Delay Time td(off) 32 65 Fall Time tf VDD = −15 V, RL = 15 Ω ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω 58 27 Source-Drain Reverse Recovery Time trr IF = −2.9 A, di/dt = 100 A/µs 40 50 ns Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
