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SI7941DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7941DP
Description  Dual P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7941DP Datasheet(HTML) 2 Page - Vishay Siliconix

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SPICE Device Model Si7941DP
Vishay Siliconix
www.vishay.com
Document Number: 71669
2
31-May-04
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = − 250 µA
1.9
V
On-State Drain Current
a
ID(on)
VDS = −5 V, VGS = −10 V
205
A
VGS = −10 V, ID = −9 A
0.022
0.022
Drain-Source On-State Resistance
a
rDS(on)
VGS = −4.5 V, ID = −5 A
0.033
0.032
Forward Transconductance
a
gfs
VDS = −15 V, ID = −2.5 A
10
14
S
Diode Forward Voltage
a
VSD
IS = −2.9 A, VGS = 0 V
−0.82
−0.80
V
Dynamic
b
Total Gate Charge
Qg
41
42
Gate-Source Charge
Qgs
8.5
8.5
Gate-Drain Charge
Qgd
VDS = −15 V, VGS = −10 V, ID = −9 A
7.5
7.5
nC
Turn-On Delay Time
td(on)
20
18
Rise Time
tr
28
29
Turn-Off Delay Time
td(off)
32
65
Fall Time
tf
VDD = −15 V, RL = 15 Ω
ID ≅ −1 A, VGEN = −10 V, RG = 6 Ω
58
27
Source-Drain Reverse Recovery Time
trr
IF = −2.9 A, di/dt = 100 A/µs
40
50
ns
Notes
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.


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