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2N5209 Datasheet(PDF) 1 Page - ON Semiconductor

Part # 2N5209
Description  Amplifier Transistors(NPN Silicon)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
50
Vdc
Collector – Base Voltage
VCBO
50
Vdc
Emitter – Base Voltage
VEBO
4.0
Vdc
Collector Current — Continuous
IC
50
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
50
Vdc
Collector – Base Breakdown Voltage
(IC = 0.1 mAdc, IE = 0)
V(BR)CBO
50
Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
ICBO
50
nAdc
Emitter Cutoff Current
(VEB = 3.0 Vdc, IC = 0)
IEBO
50
nAdc
Order this document
by 2N5209/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N5209
2N5210
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER


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