S1T8825B01-R0B0 datasheet(4/16 Pages) SAMSUNG

Part #	S1T8825B01-R0B0

Description	1.3GHZ DUAL PLL

Download	16 Pages

Scroll/Zoom	100%

Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

Logo

4 / 16 page

S1T8825B

1.3GHZ DUAL PLL

4

ELECTRICAL CHARACTERISTICS

(Ta = 25

°°°°C, V

CC = 3V, unless otherwise specified)

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Operating power supply

voltage

VCC

Fin1=Fin2= 200MHz — 550MHz

2.2

3.0

5.5

V

Fin1=Fin2= 550MHz — 1.3GHz

2.7

3.0

3.6

V

Operating current

consumption

ICC

Fin1=Fin2=1.3GHz/ -5dBm input

5.5

7.0

9.5

mA

Standby current

ISB

Standby mode

−

010

µA

Fin operating frequency

Fin

Fin1 = Fin2 =

− 5dBm

200

−

1300

MHz

Fin input sensitivity

Fin

Fin1 = Fin2

= 200MHz

Vcc=2.2V

− 15

−

0

dBm

Vcc=3.0V

− 15

−

0

Vcc=5.5V

− 10

−

0

Fin1 = Fin2

= 550MHz

Vcc=2.2V

−15

−

0

Vcc=3.0V

−15

−

0

Vcc=5.5V

− 10

−

0

Fin1 = Fin2

= 1.3GHz

Vcc=2.7V

− 10

−

0

Vcc=3.0V

− 10

−

0

Vcc=3.6V

− 10

−

0

OSCI operating frequency

Fosc

VFin = 0dBm, sinewave

5-

25

MHz

OSCI input voltage

Vosc

fosc = 10MHz

Vcc = 2.2V

− 10

0

5

dBm

Vcc = 3.0V

− 10

0

5

Vcc = 5.5V

- 5

0

5

fosc = 20MHz

Vcc = 2.2V

− 10

0

5

Vcc = 3.0V

− 10

0

5

Vcc = 5.5V

− 50

5

Serial data input high

voltage (CK, DATA, EN)

VIH

VCC = 2.2 to 5.5V

VCC −

0.4

−

-V

Serial data input low voltage

(CK, DATA, EN)

VIL

VCC = 2.2 to 5.5V

−−

0.4

V

Charge pump output

current

ICP1

CP1 = 0, CP2 = 0

VCP = 1.5 V

–

± 1.6

−

mA

ICP2

CP1 = 1, CP2 = 0

VCP = 1.5V

–

± 0.2

−

mA

ICP3

CP1 = 0, CP2 = 1

VCP = 1.5V

−± 0.4

−

mA

ICP4

CP1 = 1, CP2 = 1

VCP = 1.5V

−± 0.8

−

mA

Charge pump leakage

ICPL

Standby mode, Vcp = 1.5V

−1

−+1

µA

Similar Part No. - S1T8825B01-R0B0

Manufacturer	Part #	Datasheet	Description
Samsung semiconductor	S1T8825	120Kb / 16P	1.1GHZ DUAL PLL
Samsung semiconductor	S1T8825X01-R0B0	120Kb / 16P	1.1GHZ DUAL PLL

More results

Similar Description - S1T8825B01-R0B0

Manufacturer	Part #	Datasheet	Description
Mitel Networks Corporat...	SP5848	67Kb / 9P	2.2/1.3GHz 3-Wire Bus Dual Low Phase Noise PLL
Motorola, Inc	MC44802A	467Kb / 7P	PLL Tuning Circuit with 1.3GHz Prescaler
Zarlink Semiconductor I...	SP5848	500Kb / 10P	2.2/1.3GHz 3-Wire Bus Dual Low Phase Noise PLL
Zarlink Semiconductor I...	SL2524	299Kb / 16P	1.3GHz Dual Wideband Logarithmic Amplifier
Mitel Networks Corporat...	SL2524	377Kb / 17P	1.3GHz Dual Wideband Logarithmic Amplifier
Linear Technology	LTC6421-20	251Kb / 16P	Dual Matched 1.3GHz Differential Amplifi ers/ADC Drivers
NXP Semiconductors	SA7026	299Kb / 18P	1.3GHz low voltage fractional-N dual frequency synthesizer 1999 Nov 04
Linear Integrated Syste...	LTC6421CUDC-20	229Kb / 16P	Dual Matched 1.3GHz Differential Amplifi ers/ADC Drivers
Linear Technology	LTC6421-20	264Kb / 16P	Dual Matched 1.3GHz Differential Amplifi ers/ADC Drivers
Linear Technology	LTC5591	342Kb / 20P	Dual 1.3GHz to 2.3GHz High Dynamic Range Downconverting Mixer

More results

S1T8825B01-R0B0 Datasheet(PDF) 4 Page - Samsung semiconductor

S1T8825B01-R0B0 Datasheet(HTML) 4 Page - Samsung semiconductor

Similar Part No. - S1T8825B01-R0B0

Similar Description - S1T8825B01-R0B0

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

Datasheet Download

Link URL