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R1RW0416D Datasheet(PDF) 1 Page - Renesas Technology Corp |
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R1RW0416D Datasheet(HTML) 1 Page - Renesas Technology Corp |
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Rev.1.00, Mar.12.2004, page 1 of 14 R1RW0416D Series 4M High Speed SRAM (256-kword × 16-bit) REJ03C0107-0100Z Rev. 1.00 Mar.12.2004 Description The R1RW0416D is a 4-Mbit high speed static RAM organized 256-kword × 16-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. The R1RW0416D is packaged in 400-mil 44-pin SOJ and 400-mil 44-pin plastic TSOPII for high density surface mounting. Features • Single 3.3 V supply: 3.3 V ± 0.3 V • Access time: 12 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current: 130 mA (max) • TTL standby current: 40 mA (max) • CMOS standby current: 5 mA (max) : 0.8 mA (max) (L-version) • Data retention current: 0.4 mA (max) (L-version) • Data retention voltage: 2.0 V (min) (L-version) • Center V CC and VSS type pin out |
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