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2N3906 Datasheet(PDF) 1 Page - ON Semiconductor

Part No. 2N3906
Description  General Purpose Transistors(PNP Silicon)
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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2N3906 Datasheet(HTML) 1 Page - ON Semiconductor

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Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistors
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
40
Vdc
Collector – Base Voltage
VCBO
40
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
200
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Power Dissipation @ TA = 60°C
PD
250
mW
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS(1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage (2)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
40
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Base Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
IBL
50
nAdc
Collector Cutoff Current
(VCE = 30 Vdc, VEB = 3.0 Vdc)
ICEX
50
nAdc
1. Indicates Data in addition to JEDEC Requirements.
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
Order this document
by 2N3905/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
2N3905
2N3906
*Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
*
© Motorola, Inc. 1996
COLLECTOR
3
2
BASE
1
EMITTER
REV 2


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