Electronic Components Datasheet Search |
|
EMS20D10E Datasheet(PDF) 1 Page - Excelliance MOS Corp. |
|
EMS20D10E Datasheet(HTML) 1 Page - Excelliance MOS Corp. |
1 / 4 page 2013/8/16 p.1 EMS20D10E Dual High‐Voltage Trench Barrier Schottky Rectifier Product Summary: VRRM 100V VF @ IF=10A 0.58V IF(AV) 2 x 10A Trench Schottky Technology Pb‐Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNIT Maximum Repetitive Peak Reverse Voltage VRRM 100 V Maximum Average Forward Rectified Current Per device IF(AV) 20 A Per diode 10 Peak Forward Surge Current 8.3mS Single Half Sine‐wave Superimposed on Rated Load per Diode IFSM 150 Peak Repetitive Reverse Current @ tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C per Diode IRRM 1 Non‐repetitive Avalanche Energy @ TJ = 25 °C, L = 60 mH per Diode EAS 150 mJ Voltage rate of change (rated VR) dV/dt 10000 V/μs Operating Junction & Storage Temperature Range Tj, Tstg ‐40 to 150 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNIT Junction‐to‐Case RJC 2.8 °C / W 1Pulse width limited by maximum junction temperature. 2Duty cycle 1% |
Similar Part No. - EMS20D10E |
|
Similar Description - EMS20D10E |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |