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HGT1S12N60C3S Datasheet(PDF) 1 Page - Harris Corporation |
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HGT1S12N60C3S Datasheet(HTML) 1 Page - Harris Corporation |
1 / 6 page SEMICONDUCT OR 3-29 HGTP12N60C3, HGT1S12N60C3, HGT1S12N60C3S 24A, 600V, UFS Series N-Channel IGBTs Features • 24A, 600V at TC = 25 oC • 600V Switching SOA Capability • Typical Fall Time . . . . . . . . . . . . . . 230ns at TJ = 150 oC • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49123. Description The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power sup- plies and drivers for solenoids, relays and contactors. Terminal Diagram N-CHANNEL ENHANCEMENT MODE Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60C3 TO-220AB P12N60C3 HGT1S12N60C3 TO-262AA S12N60C3 HGT1S12N60C3S TO-263AB S12N60C3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in Tape and Reel, i.e., HGT1S12N60C3S9A. C E G Packaging JEDEC TO-220AB JEDEC TO-262AA JEDEC TO-263AB HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 GATE COLLECTOR EMITTER COLLECTOR (FLANGE) EMITTER COLLECTOR GATE COLLECTOR (FLANGE) A M COLLECTOR (FLANGE) GATE EMITTER January 1997 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1997 File Number 4040.3 |
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