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5962R9689103QYA Datasheet(PDF) 5 Page - Aeroflex Circuit Technology

Part # 5962R9689103QYA
Description  Radiation-Hardened 32K x 8 PROM
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Manufacturer  AEROFLEX [Aeroflex Circuit Technology]
Direct Link  http://www.aeroflex.com
Logo AEROFLEX - Aeroflex Circuit Technology

5962R9689103QYA Datasheet(HTML) 5 Page - Aeroflex Circuit Technology

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5
RADIATION HARDNESS
The UT28F256 PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
maintaining the circuit density and reliability. For transient
radiation hardness and latchup immunity, UTMC builds all
radiation-hardened products on epitaxial wafers using an
advanced twin-tub CMOS process. In addition, UTMC pays
special attention to power and ground distribution during the
design phase, minimizing dose-rate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS 1
Note:
1. The PROM will not latchup during radiation exposure under recommended operating conditions.
Figure 2. PROM Read Cycle
tAVAV
tAVQV
t
ELQV
tGLQV
t
AVQV
t
AXQX
tEHQZ
tGHQZ
A(14:0)
CE
OE
DQ(7:0)
tGLQX
tELQX
Total Dose
1E6
rad(Si)
Latchup LET Threshold
>128
MeV-cm
2/mg
Memory Cell LET Threshold
>128
MeV-cm2/mg
Transient Upset LET Threshold
54
MeV-cm2/mg
Transient Upset Device Cross Section @ LET=128 MeV-cm2/mg
1E-6
cm2


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