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NT5TU32M16FG-BE Datasheet(PDF) 38 Page - Nanya Technology Corporation.

Part # NT5TU32M16FG-BE
Description  Commercial and Industrial DDR2 512Mb SDRAM
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5TU32M16FG-BE Datasheet(HTML) 38 Page - Nanya Technology Corporation.

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Version 1.4
Nanya Technology Corp.©
12/2017
All Rights Reserved
NTC Proprietary
Level: Property
DDR2 512Mb SDRAM
NT5TU64M8FE / NT5TU32M16FG
Precharge Command
The Precharge Command is used to precharge or close a bank that has been activated. The Precharge
Command is triggered when
CS, RAS and WE are low and CAS is high at the rising edge of the clock. The
Pre-charge Command can be used to precharge each bank independently or all banks simultaneously. Three
address bits A10, BA0, and BA1 are used to define which bank to precharge when the command is issued.
Bank Selection for Precharge by Address Bit
A10
BA1
BA0
Precharge
Bank(s)
LOW
LOW
LOW
Bank 0 only
LOW
LOW
HIGH
Bank 1 only
LOW
HIGH
LOW
Bank 2 only
LOW
HIGH
HIGH
Bank 3 only
HIGH
Don't Care
Don't Care
All banks
Burst Read Operation Followed by a Precharge
Minimum Read to Precharge command spacing to the same bank = AL + BL/2 + max (RTP, 2) - 2 clocks.
For the earliest possible precharge, the Precharge command may be issued on the rising edge which is “Additive Latency
(AL) +
BL/2 clocks” after a Read Command, as long as the minimum tRAS timing is satisfied.
The minimum Read to Precharge spacing has also to satisfy a minimum analog time from the rising clock edge that initiates
the last 4-bit prefetch of a Read to Precharge command. This time is call tRTP (Read to Precharge). For BL=4 this is the
time from the actual read (AL after the Read command) to Precharge command. For BL=8 this is the time from AL + 2
clocks after the Read to the Precharge command.


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