NT5TU32M16FG-BE datasheet(99/107 Pages) NANYA

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NT5TU32M16FG-BE Datasheet(PDF) 99 Page - Nanya Technology Corporation.

Part #	NT5TU32M16FG-BE

Description	Commercial and Industrial DDR2 512Mb SDRAM

Download	107 Pages

Scroll/Zoom	100%

Manufacturer	NANYA [Nanya Technology Corporation.]

Direct Link	http://www.nanya.com

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99 / 107 page

Version 1.4

Nanya Technology Corp.©

12/2017

NTC Proprietary

Level: Property

DDR2 512Mb SDRAM

NT5TU64M8FE / NT5TU32M16FG

Specific Note 19 tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device

output is no longer driving (tRPST), or begins driving (tRPRE). The following figure shows a method to calculate these points when the

device is no longer driving (tRPST), or begins driving (tRPRE) by measuring the signal at two different voltages. The actual voltage

measurement points are not critical as long as the calculation is consistent.

Specific Note 20 Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal

crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(ac)

level to the differential data strobe crosspoint for a falling signal applied to the device under test. DQS,

DQSsignals must be monotonic

between Vil(dc)max and Vih(dc)min.

Specific Note 21 Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced

from the differential data strobe crosspoint to the input signal crossing at the VIH(dc) level for a falling signal and from the differential data

strobe crosspoint to the input signal crossing at the VIL(dc) level for a rising signal applied to the device under test. DQS,

DQSsignals must

be monotonic between Vil(dc)max and Vih(dc)min.

Manufacturer	Part #	Datasheet	Description
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Manufacturer	Part #	Datasheet	Description
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