NT5TU64M8FE datasheet(71/107 Pages) NANYA

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NT5TU64M8FE Datasheet(PDF) 71 Page - Nanya Technology Corporation.

Part #	NT5TU64M8FE

Description	Commercial and Industrial DDR2 512Mb SDRAM

Download	107 Pages

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Manufacturer	NANYA [Nanya Technology Corporation.]

Direct Link	http://www.nanya.com

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71 / 107 page

Version 1.4

Nanya Technology Corp.©

12/2017

NTC Proprietary

Level: Property

DDR2 512Mb SDRAM

NT5TU64M8FE / NT5TU32M16FG

Calibrated Output Driver V-I Characteristics

DDR2 SDRAM output driver characteristics are defined for full strength calibrated operation as selected by the procedure

outlined in the Off-Chip Driver (OCD) Impedance Adjustment. The following tables show the data in tabular format suitable

for input into simulation tools. The nominal points represent a device at exactly 18 ohms. The nominal low and nominal high

values represent the range that can be achieved with a maximum 1.5 ohms step size with no calibration error at the exact

nominal conditions only (i.e. perfect calibration procedure, 1.5 ohm maximum step size guaranteed by specification). Real

system calibration error needs to be added to these values. It must be understood that these V-I curves are represented

here or in supplier IBIS models need to be adjusted to a wider range as a result of any system calibration error. Since this a

system specific phenomena, it cannot be quantified here. the values in the calibrated tables represent just the DRAM

portion of uncertainty while looking at one DQ only. If the calibration procedure is used, it is possible to cause the device to

operate outside the bounds of the default device characteristics tables and figure. in such a situation, the timing parameters

in the specification cannot be guaranteed. It is solely up to the system application to ensure that the device is calibrated

between the minimum and maximum default values at all times. If this can’t be guaranteed by the system calibration

procedure, re-calibration policy and uncertainty with DQ to DQ variation, it is recommend that only the default values to be

used. The nominal maximum ad minimum values represent the change in impedance from nominal low and high as a result

of voltage and temperature change from the nominal condition to the maximum and minimum conditions. If calibrated at an

extreme condition, the amount of variation could be as much as from the nominal minimum to the nominal maximum or vice

versa.

Manufacturer	Part #	Datasheet	Description
Nanya Technology Corpor...	NT5TU64M8CE-25C	1Mb / 76P	512Mb DDR2 SDRAM C-Die REV 1.0 10/2007
	NT5TU64M8CE-25D	1Mb / 76P	512Mb DDR2 SDRAM C-Die REV 1.0 10/2007
	NT5TU64M8CE-3C	1Mb / 76P	512Mb DDR2 SDRAM C-Die REV 1.0 10/2007
	NT5TU64M8EE	4Mb / 98P	Commercial, Industrial and Automotive DDR2 512Mb SDRAM
	NT5TU64M8EE	3Mb / 96P	DDR2 512Mb SDRAM

Manufacturer	Part #	Datasheet	Description
Nanya Technology Corpor...	NT5TU32M16EG	4Mb / 98P	Commercial, Industrial and Automotive DDR2 512Mb SDRAM
Nanya Technology Corpor...	NT6DM32M16BD	4Mb / 81P	Commercial and Industrial Mobile DDR 512Mb SDRAM
Hynix Semiconductor	HY5PS12421AFP	1Mb / 37P	512Mb DDR2 SDRAM
	H5PS5162FFR-C	530Kb / 39P	512Mb DDR2 SDRAM
	HY5PS12421F	623Kb / 35P	512Mb DDR2 SDRAM
	HY5PS12421FP	622Kb / 35P	512Mb DDR2 SDRAM
	H5PS5182GFR	1Mb / 64P	512Mb DDR2 SDRAM
Nanya Technology Corpor...	NT5TU64M8EE	3Mb / 96P	DDR2 512Mb SDRAM
Hynix Semiconductor	HY5PS12421F-E3	1Mb / 35P	512Mb DDR2 SDRAM
Hynix Semiconductor	HY5PS12421CFP-E3I	618Kb / 38P	512Mb DDR2 SDRAM

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