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NT5TU32M16EG Datasheet(PDF) 25 Page - Nanya Technology Corporation.

Part # NT5TU32M16EG
Description  DDR2 512Mb SDRAM
Download  96 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5TU32M16EG Datasheet(HTML) 25 Page - Nanya Technology Corporation.

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DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
25
Version 1.0
Nanya Technology Corp.©
09/2014
All Rights Reserved
Burst Read Command
The Burst Read command is initiated by having
CS and CAS low while holding RAS and WE high at the rising edge of the
clock. The address inputs determine the starting column address for the burst. The delay from the start of the command
until the data from the first cell appears on the outputs is equal to the value of the read latency (RL). The data strobe output
(DQS) is driven low one clock cycle before valid data (DQ) is driven onto the data bus. The first bit of the burst is
synchronized with the rising edge of the data strobe (DQS). Each subsequent data-out appears on the DQ pin in phase with
the DQS signal in a source synchronous manner. The RL is equal to an additive latency (AL) plus
CAS latency (CL). The CL
is defined by the Mode Register Set (MRS).
The AL is defined by the Extended Mode Register Set (EMRS (1))
Basic Burst Read Timing
DQS,
DQS
DQ
DQS
DQS
t RPRE
t DQSQmax
tRPST
t DQSCK
tAC
Dout
Dout
Dout
Dout
CLK, CLK
CLK
CLK
t CH
tCL
t CK
DO-Read
t QH
DQSQmax
t
QH
t
t LZ
t HZ
Examples:
Burst Read Operation: RL = 5 (AL = 2, CL = 3, BL = 4)
NOP
NOP
NOP
NOP
NOP
NOP
NOP
READ A
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 5
AL = 2
CL = 3
NOP
<= tDQSCK
CMD
DQ
BRead523
DQS,
DQS
Post CAS
CK, CK


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