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NT5TU32M16EG Datasheet(PDF) 88 Page - Nanya Technology Corporation.

Part # NT5TU32M16EG
Description  DDR2 512Mb SDRAM
Download  96 Pages
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Manufacturer  NANYA [Nanya Technology Corporation.]
Direct Link  http://www.nanya.com
Logo NANYA - Nanya Technology Corporation.

NT5TU32M16EG Datasheet(HTML) 88 Page - Nanya Technology Corporation.

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DDR2 512Mb SDRAM
NT5TU64M8EE / NT5TU32M16EG
88
Version 1.0
Nanya Technology Corp.©
09/2014
All Rights Reserved
Specific Note 19 tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device
output is no longer driving (tRPST), or begins driving (tRPRE). The following figure shows a method to calculate these points when the
device is no longer driving (tRPST), or begins driving (tRPRE) by measuring the signal at two different voltages. The actual voltage
measurement points are not critical as long as the calculation is consistent.
Specific Note 20 Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal
crossing at the VIH(ac) level to the differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(ac)
level to the differential data strobe crosspoint for a falling signal applied to the device under test. DQS,
DQSsignals must be monotonic
between Vil(dc)max and Vih(dc)min.
Specific Note 21 Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced
from the differential data strobe crosspoint to the input signal crossing at the VIH(dc) level for a falling signal and from the differential data
strobe crosspoint to the input signal crossing at the VIL(dc) level for a rising signal applied to the device under test. DQS,
DQSsignals must
be monotonic between Vil(dc)max and Vih(dc)min.


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