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MRF6P21190HR6 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

Part No. MRF6P21190HR6
Description  RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET
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Maker  FREESCALE [Freescale Semiconductor, Inc]
Homepage  http://www.freescale.com
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MRF6P21190HR6 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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6
RF Device Data
Freescale Semiconductor
MRF6P21190HR6
TYPICAL CHARACTERISTICS
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
10
−55
−15
0.1
7th Order
TWO−TONE SPACING (MHz)
VDD = 28 Vdc, Pout = 190 W (PEP), IDQ = 1900 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
5th Order
3rd Order
−20
−30
−40
−45
−50
1
100
−25
−35
Figure 8. Pulse CW Output Power versus
Input Power
44
58
34
P3dB = 54.45 dBm (279 W)
Pin, INPUT POWER (dBm)
VDD = 28 Vdc, IDQ = 1900 mA
Pulsed CW, 8
µsec(on), 1 msec(off)
f = 2140 MHz
56
54
52
47
36
38
40
42
Actual
Ideal
P1dB = 53.7 dBm (233 W)
57
48
32
50
Figure 9. 2-Carrier W-CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
0
−60
Pout, OUTPUT POWER (WATTS) AVG.
30
−30
25
20
−35
15
−40
5
−50
1
10
100
−45
10
−55
IM3
ηD
Gps
ACPR
300
0
18
0
60
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD = 28 Vdc
IDQ = 1900 mA
f = 2140 MHz
100
10
15
12
9
6
3
50
40
30
20
10
Gps
ηD
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD = 28 V
500
6
18
10
16
10
8
100
12
14
24 V
IDQ = 1900 mA
f = 2140 MHz
20 V
16 V
12 V
VDD = 28 Vdc, IDQ = 1900 mA
f1 = 2135 MHz, f2 = 2145 MHz
2−Carrier W−CDMA, 10 MHz
Carrier Spacing, 3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
3
3
55
53
51
49
33
35
37
39
41
43


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