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KM68V1000BLT-10 Datasheet(PDF) 5 Page - Samsung semiconductor

Part No. KM68V1000BLT-10
Description  128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68V1000BLT-10 Datasheet(HTML) 5 Page - Samsung semiconductor

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KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
CL1)
1. Including scope and jig capacitance
AC OPERATING CONDITIONS
TEST CONDITIONS( Test Load and Input/Output Reference)
Input pulse level : 0.4 to 2.2V
Input rising and falling time : 5ns
Input and output reference voltage :1.5V
Output load(see right) : CL=100pF+1TTL
CL=30pF+1TTL
AC CHARACTERISTICS (Commercial product :TA=0 to 70°C, Extended product :TA=-25 to 85°C, Industrial product : TA=-40 to 85°C
KM68V1000B Family:Vcc=3.0~3.6V, KM68U1000B Family:Vcc=2.7~3.3V)
Parameter List
Symbol
Speed Bins
Units
70ns
100ns
Min
Max
Min
Max
Read
Read cycle time
tRC
70
-
100
-
ns
Address access time
tAA
-
70
-
100
ns
Chip select to output
tCO
-
70
-
100
ns
Output enable to valid output
tOE
-
35
-
50
ns
Chip select to low-Z output
tLZ
10
-
10
-
ns
Output enable to low-Z output
tOLZ
5
-
5
-
ns
Chip disable to high-Z output
tHZ
0
25
0
30
ns
Output disable to high-Z output
tOHZ
0
25
0
30
ns
Output hold from address change
tOH
10
-
15
-
ns
Write
Write cycle time
tWC
70
-
100
-
ns
Chip select to end of write
tCW
60
-
80
-
ns
Address set-up time
tAS
0
-
0
-
ns
Address valid to end of write
tAW
60
-
80
-
ns
Write pulse width
tWP
55
-
70
-
ns
Write recovery time
tWR
0
-
0
-
ns
Write to output high-Z
tWHZ
0
25
0
30
ns
Data to write time overlap
tDW
30
-
40
-
ns
Data hold from write time
tDH
0
-
0
-
ns
End write to output low-Z
tOW
5
-
5
-
ns
DATA RETENTION CHARACTERISTICS
1. CS
≥VCC-0.2V, CS2≥VCC-0.2V(CS1 controlled) or CS2≤0.2V(CS2 controlled)
Item
Symbol
Test Condition
Min
Typ
Max
Unit
Vcc for data retention
VDR
CS11)
≥Vcc-0.2V
2.0
-
3.6
V
Data retention current
IDR
KM68V1000BL/L-L
Vcc=3.0V
CS1
≥Vcc-0.2V
CS2
≥Vcc-0.2V
or CS2
≤0.2V
Low Power
Low Low Power
-
-
1
0.5
30
15
µA
KM68V1000BLE/LE-L
KM68V1000BLI/LI-L
Low Power
Low Low Power
-
-
-
-
50
20
KM68U1000BL/L-L
Low Power
Low Low Power
-
-
-
-
25
10
KM68U1000BLE/LE-L
KM68U1000BLI/LI-L
Low Power
Low Low Power
-
-
-
-
25
15
Data retention set-up time
tSDR
See data retention waveform
0
-
-
ms
Recovery time
tRDR
5
-
-


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