SI8407DB datasheet(4/6 Pages) VISHAY

Part #	SI8407DB

Description	P-Channel 20-V (D-S) MOSFET

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Si8407DB

Vishay Siliconix

www.vishay.com

4

Document Number: 72254

S-50066—Rev. B, 17-Jan-05

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

10−3

10−2

1

10

600

10−1

10−4

100

0.001

0

40

60

50

10

Single Pulse Power, Juncion-To-Ambient

Time (sec)

20

2

1

0.1

0.01

0.2

0.1

0.05

0.02

Single Pulse

Duty Cycle = 0.5

Normalized Thermal Transient Impedance, Junction-to-Ambient

Square Wave Pulse Duration (sec)

1. Duty Cycle, D =

2. Per Unit Base = RthJA = 72_C/W

3. TJM − TA = PDMZthJA(t)

t1

t2

t1

t2

Notes:

4. Surface Mounted

PDM

0.01

0.1

1

−0.4

−0.2

0.0

0.2

0.4

0.6

−50

−25

0

25

50

75

100

125

150

ID = 350 mA

Threshold Voltage

TJ − Temperature (_C)

30

10

Safe Operating Area

100

1

0.1

1

10

100

0.01

10

TA = 25_C

Single Pulse

0.1

* rDS(on) Limited

1 ms

10 ms

100 ms

100 s, dc

10 ms, 100 ms

1 s

10 s

VDS − Drain-to-Source Voltage (V)

*VGS u minimum VGS at which rDS(on) is specified

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