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KM68V1000B Datasheet(PDF) 2 Page - Samsung semiconductor

Part No. KM68V1000B
Description  128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KM68V1000B Datasheet(HTML) 2 Page - Samsung semiconductor

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KM68V1000B, KM68U1000B Family
CMOS SRAM
Revision 2.0
March 1998
128K x8 bit Low Power and Low Voltage CMOS Static RAM
GENERAL DESCRIPTION
The KM68V1000B and KM68U1000B families are fabricated
by SAMSUNG
′s advanced CMOS process technology. The
families support various operating temperature ranges and
have various package types for user flexibility of system
design. The families also support low data retention voltage for
battery back-up operation with low data retention current.
FEATURES
• Process Technology : Poly Load
• Organization : 128Kx8
• Power Supply Voltage :
KM68V1000B family : 3.0~3.6V
KM68U1000B family : 2.7~3.3V
• Low Data Retention Voltage : 2V(Min)
• Three state output and TTL Compatible
• Package Type : 32-SOP, 32-TSOP1-0820F/R
Name
Function
CS1,CS2
Chip Select Inputs
OE
Output Enable Input
WE
Write Enable Input
A0~A16
Address Inputs
I/O1~I/O8
Data Inputs/Outputs
Vcc
Power
Vss
Ground
N.C
No Connection
PRODUCT FAMILY
1. The parameter is measured with 30pF test load.
Product Family
Operating Temperature
Vcc Range
Speed(ns)
Power Dissipation
PKG Type
Standby
(ISB1, Max)
Operating
(ICC2, Max)
KM68V1000BL/L-L
Commercial(0~70
°C)
3.0~3.6V
701)/100
50/15
µA
50/15
µA
40mA
32-SOP
32-TSOP1- R/F
KM68U1000BL/L-L
2.7~3.3V
100
KM68V1000BLE/LE-L
Extended(-25~85
°C)
3.0~3.6V
701)/100
100/20
µA
50/15
µA
KM68U1000BLE/LE-L
2.7~3.3V
100
KM68V1000BLI/LI-L
Industrial(-40~85
°C)
3.0~3.6V
701)/100
100/20
µA
50/15
µA
KM68U1000BLI/LI-L
2.7~3.3V
100
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
32-TSOP
Type 1 - Reverse
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
Type 1 - Forward
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
N.C
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O1
I/O2
I/O3
VSS
VCC
A15
CS2
WE
A13
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-SOP
A11
A9
A8
A13
WE
CS2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
OE
A10
CS1
I/O8
I/O7
I/O6
I/O5
I/O4
VSS
I/O3
I/O2
I/O1
A0
A1
A2
A3
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32-TSOP
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
A11
Precharge circuit.
Memory array
512 rows
256
×8 columns
I/O Circuit
Column select
Clk gen.
Row
select
A0 A1 A2 A3 A8
A10
A9
A4
A5
A6
A7
A12
A13
A15
CS1
CS2
WE
I/O1
Data
cont
Data
cont
OE
I/O8
A14
Control
Logic
A16


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