DS2751

9 of 19

Figure 4. CURRENT ACCUMULATOR FORMAT

MSB—Address 10

LSB—Address 11

S

MSb

LSb

MSb

LSb

Units: 0.25mAhrs for internal sense resistor

6.25

mVhrs for external sense resistor

CURRENT OFFSET COMPENSATION

Current measurement and the current accumulation are both internally compensated for offset on a

continual basis minimizing error resulting from variations in device temperature and voltage.

Additionally, a constant bias can be utilized to alter any other sources of offset. This bias resides in

EEPROM address 33h in two’s-complement format and is subtracted from each current measurement.

The current offset bias is applied to both the internal and external sense resistor configurations. The

factory default for the current offset bias is a value of 0.

Figure 5. CURRENT OFFSET BIAS

Address 33

S

MSb

LSb

Units: 0.625mA for internal sense resistor

15.625

mV for external sense resistor

VOLTAGE MEASUREMENT

Voltage Register is updated in two’s-complement format every 3.4ms with a resolution of 4.88mV.

Voltages above the maximum register value are reported as the maximum value. The Voltage Register

format is shown in Figure 6.

Figure 6. VOLTAGE REGISTER FORMAT

MSB—Address 0C

LSB—Address 0D

S

X

X

X

X

X

MSb

LSb

MSb

LSb

Units: 4.88 mV