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K6R4016C1D-TL10 Datasheet(PDF) 6 Page - Samsung semiconductor

Part # K6R4016C1D-TL10
Description  256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R4016C1D-TL10 Datasheet(HTML) 6 Page - Samsung semiconductor

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K6R4016C1D
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.0
- 6 -
June 2003
TEST CONDITIONS*
* The above test conditions are also applied at industrial temperature range.
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS (TA=0 to 70
°C, VCC=5.0V±10%, unless otherwise noted.)
Output Loads(B)
DOUT
5pF*
480
255
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+5.0V
* Including Scope and Jig Capacitance
Output Loads(A)
DOUT
RL = 50
ZO = 50
VL = 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R4016C1D-10
Unit
Min
Max
Read Cycle Time
tRC
10
-
ns
Address Access Time
tAA
-
10
ns
Chip Select to Output
tCO
-
10
ns
Output Enable to Valid Output
tOE
-
5
ns
Chip Enable to Low-Z Output
tLZ
3
-
ns
Output Enable to Low-Z Output
tOLZ
0
-
ns
Chip Disable to High-Z Output
tHZ
0
5
ns
Output Disable to High-Z Output
tOHZ
0
5
ns
Output Hold from Address Change
tOH
3
-
ns
Chip Selection to Power Up Time
tPU
0
-
ns
Chip Selection to Power DownTime
tPD
-
10
ns


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