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FJPF5555 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. FJPF5555
Description  High Voltage Switch Mode Application
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FJPF5555 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2004 Fairchild Semiconductor Corporation
Rev. A, June 2004
NPN Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse test: PW
≤300µs, Duty Cycle≤2%
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
1050
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
14
V
IC
Collector Current (DC)
5
A
ICP
Collector Current (Pulse)
10
A
PC
Collector Dissipation
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
BVCBO
Collector-Base Breakdown Voltage
IC=500µA, IE=0
1050
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500µA, IC=0
14
V
hFE
*
DC Current Gain
VCE=5V, IC=10mA
10
VCE=3V, IC=0.8A
20
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC=1A, IB=0.2A
0.5
V
IC=3.5A, IB=1.0A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=3.5A, IB=1.0A
1.2
V
Cob
Output Capacitance
VCB=10V, f=1MHz
45
pF
tON
Turn On Time
VCC=125V, IC=0.5A
IB1=45mA, IB2=0.5A
RL=250Ω
1.0
µs
tSTG
Storage Time
1.2
µs
tF
Fall Time
0.3
µs
tON
Turn On Time
VCC=250V, IC=2.5A
IB1=0.5A, IB2=1.0A
RL=100Ω
2.0
µs
tSTG
Storage Time
2.5
µs
tF
Fall Time
0.3
µs
FJPF5555
High Voltage Switch Mode Application
• Fast Speed Switching
• Wide Safe Operating Area
• Suitable for Electronic Ballast Application
1.Base
2.Collector
3.Emitter
1
TO-220F


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