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SLW18N50C Datasheet(PDF) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

Part No. SLW18N50C
Description  500V N-Channel MOSFET
Download  6 Pages
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Maker  MAPLESMI [Shenzhen Meipusen Semiconductor Co., Ltd]
Homepage  http://www.meipusen.com/
Logo MAPLESMI - Shenzhen Meipusen Semiconductor Co., Ltd

SLW18N50C Datasheet(HTML) 2 Page - Shenzhen Meipusen Semiconductor Co., Ltd

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Electrical Characteristics
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 uA
500
--
--
V
△BVDSS
/
△TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 uA, Referenced to 25℃
--
0.5
--
V/℃
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
--
1
uA
VDS = 400 V, TC = 125℃
--
--
10
uA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
On Characteristics
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 uA
3.0
--
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.0 A
--
0.25
0.32
gFS
Forward Transconductance
VDS = 40 V, ID = 9.0 A
(Note 4)
--
15
--
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 25 V, VGS = 0 V,
--
2500
--
pF
C
Output Capacitance
400
pF
f = 1.0 MHz
Coss
Output Capacitance
--
400
--
pF
Crss
Reverse Transfer Capacitance
--
40
--
pF
Switching Characteristics
td(on)
Turn-On Delay Time
VDD = 250 V, ID = 18 A,
RG = 25 Ω
(Note 4, 5)
--
70
--
ns
tr
Turn-On Rise Time
--
190
--
ns
td(off)
Turn-Off Delay Time
--
100
--
ns
tf
Turn-Off Fall Time
--
100
--
ns
Qg
Total Gate Charge
VDS = 400 V, ID = 18 A,
V
10 V
--
50
--
nC
Q
Gate Source Charge
14
nC
VGS = 10 V
(Note 4, 5)
Qgs
Gate-Source Charge
--
14
--
nC
Qgd
Gate-Drain Charge
--
22
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
18
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
72
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 18 A
--
--
1.4
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 18 A,
--
550
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/us
(Note 4)
--
5.5
--
uC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 5.5mH, IAS = 18A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD  18A, di/dt  200A/us, VDD  BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width
 300us, Duty cycle  2%
5. Essentially independent of operating temperature
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 April. 2013


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