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SLW18N50C Datasheet(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLW18N50C Datasheet(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLW18N50C SLW18N50C 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features - 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V - Low gate charge ( typical 50nC) - High ruggedness - Fast switching to minimize on state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Fast switching - 100% avalanche tested - Improved dv/dt capability D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter SLW18N50C Units VDSS Drain-Source Voltage 500 V Drain Current - Continuous (TC =25℃) 18 A G S G D S TO-3P ID Drain Current - Continuous (TC = 25℃) 18 A - Continuous (TC = 100℃) 10.8 A IDM Drain Current - Pulsed (Note 1) 72 A VGSS Gate-Source Voltage ±30 V EAS Single Pulsed Avalanche Energy (Note 2) 990 mJ IAR Avalanche Current (Note 1) 18 A EAR Repetitive Avalanche Energy (Note 1) 23.5 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TC = 25℃) 235 W PD - Derate above 25℃ 1.88 W/℃ TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ TL Maximum lead temperature for soldering purposes, 300 ℃ 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 April. 2013 Symbol Parameter Typ Max Units RθJC Thermal Resistance, Junction-to-Case -- 0.52 ℃ /W RθJS Thermal Resistance, Case-to-Sink Typ. 0.24 -- ℃ /W RθJA Thermal Resistance, Junction-to-Ambient -- 40 ℃ /W |
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