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SLW18N50C Datasheet(PDF) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd

Part No. SLW18N50C
Description  500V N-Channel MOSFET
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Maker  MAPLESMI [Shenzhen Meipusen Semiconductor Co., Ltd]
Homepage  http://www.meipusen.com/
Logo MAPLESMI - Shenzhen Meipusen Semiconductor Co., Ltd

SLW18N50C Datasheet(HTML) 1 Page - Shenzhen Meipusen Semiconductor Co., Ltd

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SLW18N50C
SLW18N50C
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Maple semi‘s
advanced planar stripe DMOS technology.
This advanced technology has been especially tailored
to minimize on-state resistance, provide superior switching
Features
- 18A, 500V, RDS(on) = 0.32Ω@VGS = 10 V
- Low gate charge ( typical 50nC)
- High ruggedness
- Fast switching
to minimize on state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge topology.
Fast switching
- 100% avalanche tested
- Improved dv/dt capability
D
Absolute Maximum Ratings
TC = 25°C unless otherwise noted
Symbol
Parameter
SLW18N50C
Units
VDSS
Drain-Source Voltage
500
V
Drain Current
- Continuous (TC =25℃)
18
A
G
S
G D S
TO-3P
ID
Drain Current
- Continuous (TC = 25℃)
18
A
- Continuous (TC = 100℃)
10.8
A
IDM
Drain Current
- Pulsed
(Note 1)
72
A
VGSS
Gate-Source Voltage
±30
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
990
mJ
IAR
Avalanche Current
(Note 1)
18
A
EAR
Repetitive Avalanche Energy
(Note 1)
23.5
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation (TC = 25℃)
235
W
PD
- Derate above 25℃
1.88
W/℃
TJ, TSTG
Operating and Storage Temperature Range
-55 to +150
TL
Maximum lead temperature for soldering purposes,
300
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
Parameter
Typ
Max
Units
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 April. 2013
Symbol
Parameter
Typ
Max
Units
RθJC
Thermal Resistance, Junction-to-Case
--
0.52
/W
RθJS
Thermal Resistance, Case-to-Sink Typ.
0.24
--
/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
40
/W


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