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SLW18N50C Datasheet(PDF) 3 Page - Shenzhen Meipusen Semiconductor Co., Ltd

Part No. SLW18N50C
Description  500V N-Channel MOSFET
Download  6 Pages
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Maker  MAPLESMI [Shenzhen Meipusen Semiconductor Co., Ltd]
Homepage  http://www.meipusen.com/
Logo MAPLESMI - Shenzhen Meipusen Semiconductor Co., Ltd

SLW18N50C Datasheet(HTML) 3 Page - Shenzhen Meipusen Semiconductor Co., Ltd

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Typical Characteristics
10
2
V
GS
10
2
10
-1
10
0
10
1
10
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
Notes :
1. 250μ s Pulse Test
2. T
C = 25℃
10
1
150
oC
25
oC
-55
oC
Notes :
1. V
DS = 40V
2. 250μ s Pulse Test
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
10
-1
10
0
10
1
V
DS, Drain-Source Voltage [V]
24
6
8
10
12
10
0
V
GS, Gate-Source Voltage [V]
0.6
10
2
0
5
10
15
20
25
30
35
40
45
50
55
60
65
70
0.1
0.2
0.3
0.4
0.5
V
GS = 20V
V
GS = 10V
Note : T
J = 25℃
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
10
0
10
1
150℃
Notes :
1. V
GS = 0V
2. 250μ s Pulse Test
25℃
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
I
D, Drain Current [A]
V
SD, Source-Drain voltage [V]
3500
4000
4500
C
iss = Cgs + Cgd (Cds = shorted)
C
oss = Cds + Cgd
C
rss = Cgd
10
12
V
DS = 250V
V
DS = 100V
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
Notes ;
1. V
GS = 0 V
2. f = 1 MHz
C
rss
C
oss
C
iss
V
DS, Drain-Source Voltage [V]
0
1020
304050
60
0
2
4
6
8
V
DS = 400V
Note : I
D = 18A
Q
G, Total Gate Charge [nC]
Maple Semiconductor CO., LTD
http://www.maplesemi.com
Rev. 00 April. 2013
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
DS,g
[ ]


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