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SLW18N50C Datasheet(PDF) 3 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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SLW18N50C Datasheet(HTML) 3 Page - Shenzhen Meipusen Semiconductor Co., Ltd |
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Typical Characteristics 10 2 V GS 10 2 10 -1 10 0 10 1 10 Top : 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V ※ Notes : 1. 250μ s Pulse Test 2. T C = 25℃ 10 1 150 oC 25 oC -55 oC ※ Notes : 1. V DS = 40V 2. 250μ s Pulse Test Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 10 -1 10 0 10 1 V DS, Drain-Source Voltage [V] 24 6 8 10 12 10 0 V GS, Gate-Source Voltage [V] 0.6 10 2 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 0.1 0.2 0.3 0.4 0.5 V GS = 20V V GS = 10V ※ Note : T J = 25℃ 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 0 10 1 150℃ ※ Notes : 1. V GS = 0V 2. 250μ s Pulse Test 25℃ Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature I D, Drain Current [A] V SD, Source-Drain voltage [V] 3500 4000 4500 C iss = Cgs + Cgd (Cds = shorted) C oss = Cds + Cgd C rss = Cgd 10 12 V DS = 250V V DS = 100V 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 ※ Notes ; 1. V GS = 0 V 2. f = 1 MHz C rss C oss C iss V DS, Drain-Source Voltage [V] 0 1020 304050 60 0 2 4 6 8 V DS = 400V ※ Note : I D = 18A Q G, Total Gate Charge [nC] Maple Semiconductor CO., LTD http://www.maplesemi.com Rev. 00 April. 2013 Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics DS,g [ ] |
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