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FJP5555 Datasheet(PDF) 2 Page - Fairchild Semiconductor

Part No. FJP5555
Description  High Voltage Switch Mode Application
Download  5 Pages
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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FJP5555 Datasheet(HTML) 2 Page - Fairchild Semiconductor

   
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© 2007 Fairchild Semiconductor Corporation
www.fairchildsemi.com
FJP5555 Rev. 1.0.0
2
Electrical Characteristics * T
C=25°C unless otherwise noted
* Pulse Test: Pulse Width
£300ms, Duty Cycle£2%
Symbol
Parameter
Conditions
Min.
Typ.
Max
Units
BVCBO
Collector-Base Breakdown Voltage
IC=500mA, IE=0
1050
V
BVCEO
Collector-Emitter Breakdown Voltage
IC=5mA, IB=0
400
V
BVEBO
Emitter-Base Breakdown Voltage
IE=500mA, IC=0
14
V
hFE
*
DC Current Gain
VCE=5V, IC=10mA
10
VCE=3V, IC=0.8A
20
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC=1A, IB=0.2A
0.5
V
IC=3.5A, IB=1.0A
1.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=3.5A, IB=1.0A
1.2
V
Cob
Output Capacitance
VCB=10V, f=1MHz
45
pF
tON
Turn On Time
VCC=125V, IC=0.5A
IB1=45mA, IB2=0.5A
RL=250W
1.0
ms
tSTG
Storage Time
1.2
ms
tF
Fall Time
0.3
ms
tON
Turn On Time
VCC=250V, IC=2.5A
IB1=0.5A, IB2=1.0A
RL=100W
2.0
ms
tSTG
Storage Time
2.5
ms
tF
Fall Time
0.3
ms
EAS
Avalanche Energy
L= 2mH
6
mJ


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