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S75PL127JBF Datasheet(PDF) 12 Page - SPANSION |
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S75PL127JBF Datasheet(HTML) 12 Page - SPANSION |
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12 / 183 page  Publication Number S29PL127J_064J_032J_MCP Revision A Amendment 3 Issue Date August 12, 2004 PRELIMINARY S29PL127J/S29PL064J/S29PL032J for MCP 128/64/32 Megabit (8/4/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory with Enhanced VersatileIOTM Control Distinctive Characteristics ARCHITECTURAL ADVANTAGES 128/64/32 Mbit Page Mode devices — Page size of 8 words: Fast page read access from random locations within the page Single power supply operation — Full Voltage range: 2.7 to 3.1 volt read, erase, and program operations for battery-powered applications Simultaneous Read/Write Operation — Data can be continuously read from one bank while executing erase/program functions in another bank — Zero latency switching from write to read operations FlexBank Architecture (PL127J/PL064J/PL032J) — 4 separate banks, with up to two simultaneous operations per device —Bank A: PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31) PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15) PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7) —Bank B: PL127J - 48 Mbit (32 Kw x 96) PL064J - 24 Mbit (32 Kw x 48) PL032J - 12 Mbit (32 Kw x 24) —Bank C: PL127J - 48 Mbit (32 Kw x 96) PL064J - 24 Mbit (32 Kw x 48) PL032J - 12 Mbit (32 Kw x 24) —Bank D: PL127J -16 Mbit (4 Kw x 8 and 32 Kw x 31) PL064J - 8 Mbit (4 Kw x 8 and 32 Kw x 15) PL032J - 4 Mbit (4 Kw x 8 and 32 Kw x 7) Enhanced VersatileI/OTM (VIO) Control — Output voltage generated and input voltages tolerated on all control inputs and I/Os is determined by the voltage on the VIO pin —VIO options at 1.8 V and 3 V I/O for PL127J devices —3V VIO for PL064J and PL032J devices SecSiTM (Secured Silicon) Sector region — Up to 128 words accessible through a command sequence — Up to 64 factory-locked words — Up to 64 customer-lockable words Both top and bottom boot blocks in one device Manufactured on 110 nm process technology Data Retention: 20 years typical Cycling Endurance: 1 million cycles per sector typical PERFORMANCE CHARACTERISTICS High Performance — Page access times as fast as 20 ns — Random access times as fast as 55 ns Power consumption (typical values at 10 MHz) — 45 mA active read current — 17 mA program/erase current — 0.2 µA typical standby mode current SOFTWARE FEATURES Software command-set compatible with JEDEC 42.4 standard — Backward compatible with Am29F, Am29LV, Am29DL, and AM29PDL families and MBM29QM/RM, MBM29LV, MBM29DL, MBM29PDL families CFI (Common Flash Interface) compliant — Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices Erase Suspend / Erase Resume — Suspends an erase operation to allow read or program operations in other sectors of same bank Unlock Bypass Program command — Reduces overall programming time when issuing multiple program command sequences |
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