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PDTC323TK Datasheet(PDF) 4 Page - NXP Semiconductors |
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PDTC323TK Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 8 page 9397 750 14946 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 3 June 2005 4 of 8 Philips Semiconductors PDTC323TK NPN 500 mA resistor-equipped transistor; R1 = 2.2 k Ω, R2 = open VCE =5V (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C IC/IB =20 (1) Tamb = 100 °C (2) Tamb =25 °C (3) Tamb = −40 °C Fig 1. DC current gain as a function of collector current; typical values Fig 2. Collector-emitter saturation voltage as a function of collector current; typical values 006aaa447 IC (mA) 10−1 103 102 110 103 hFE 102 (1) (2) (3) 006aaa448 IC (mA) 10−1 102 10 1 10−1 VCEsat (V) 10−2 (1) (2) (3) |
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