CY62137CV18 MoBL2™
Document #: 38-05017 Rev. *B
Page 5 of 11
Switching Characteristics Over the Operating Range[8]
55 ns
70 ns
Parameter
Description
Min.
Max.
Min.
Max.
Unit
READ CYCLE
tRC
Read Cycle Time
55
70
ns
tAA
Address to Data Valid
55
70
ns
tOHA
Data Hold from Address Change
10
10
ns
tACE
CE LOW to Data Valid
55
70
ns
tDOE
OE LOW to Data Valid
25
35
ns
tLZOE
OE LOW to Low Z[9]
5
5
ns
tHZOE
OE HIGH to High Z[9, 10]
20
25
ns
tLZCE
CE LOW to Low Z[9]
5
10
ns
tHZCE
CE HIGH to High Z[9, 10]
20
25
ns
tPU
CE LOW to Power-Up
0
0
ns
tPD
CE HIGH to Power-Down
55
70
ns
tDBE
BLE/BHE LOW to Data Valid
55
70
ns
tLZBE
BLE/BHE LOW to Low Z[9]
5
5
ns
tHZBE
BLE/BHE HIGH to High Z[9, 10]
20
25
ns
WRITE CYCLE[11]
tWC
Write Cycle Time
55
70
ns
tSCE
CE LOW to Write End
40
60
ns
tAW
Address Set-Up to Write End
40
60
ns
tHA
Address Hold from Write End
0
0
ns
tSA
Address Set-Up to Write Start
0
0
ns
tPWE
WE Pulse Width
40
50
ns
tBW
BLE/BHE LOW to Write End
40
60
ns
tSD
Data Set-Up to Write End
25
30
ns
tHD
Data Hold from Write End
0
0
ns
tHZWE
WE LOW to High Z[9, 10]
20
25
ns
tLZWE
WE HIGH to Low Z[9]
5
10
ns
Notes:
8.
Test conditions assume signal transition time of 5 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the
specified IOL/IOH and 30 pF load capacitance.
9.
At any given temperature and voltage condition, tHZCEis less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
10. tHZOE, tHZCE, tHZBE and tHZWE transitions are measured when the outputs enter a high impedance state.
11.
The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE =VIL. All signals must be ACTIVE to initiate a write and any
of these signals can terminate a write by going INACTIVE. The data input set-up and hold timing should be referenced to the edge of the signal that terminates
the write.
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