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HM5116100 Datasheet(PDF) 10 Page - Hitachi Semiconductor

Part # HM5116100
Description  16M FP DRAM (16-Mword x 1-bit) 4k Refresh
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Manufacturer  HITACHI [Hitachi Semiconductor]
Direct Link  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

HM5116100 Datasheet(HTML) 10 Page - Hitachi Semiconductor

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HM5116100 Series
10
Notes: 1. AC measurements assume t
T = 5 ns.
2. An initial pause of 200
µs is required after power up followed by a minimum of eight initialization
cycles (any combination of cycles containing
RAS-only refresh or CAS-before-RAS refresh). If
the internal refresh counter is used, a minimum of eight
CAS-before-RAS refresh cycles are
required.
3. Operation with the t
RCD (max) limit insures that tRAC (max) can be met, tRCD (max) is specified as a
reference point only; if t
RCD is greater than the specified tRCD (max) limit, then access time is
controlled exclusively by t
CAC.
4. Operation with the t
RAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a
reference point only; if t
RAD is greater than the specified tRAD (max) limit, then access time is
controlled exclusively by t
AA.
5. V
IH (min) and VIL (max) are reference levels for measuring timing of input signals.
Also, transition
times are measured between V
IH (min) and VIL (max).
6. Assume that t
RCD ≤ tRCD (max) and tRAD ≤ tRAD (max).
If t
RCD or tRAD is greater than the maximum
recommended value shown in this table, t
RAC exceeds the value shown.
7. Measured with a load circuit equivalent to 2 TTL loads and 100 pF.
8. Assume that t
RCD ≥ tRCD (max) and tRAD ≤ tRAD (max).
9. Assume that t
RCD ≤ tRCD (max) and tRAD ≥ tRAD (max).
10. Either t
RCH or tRRH must be satisfied for a read cycles.
11. t
OFF (max) and tOEZ (max) define the time at which the outputs achieve the open circuit condition
and are not referred to output voltage levels.
12. t
WCS, t RWD, t CWD, t AWD and t CPW are not restrictive operating parameters.
They are included in the
data sheet as electrical characteristics only; if t
WCS ≥ tWCS (min), the cycle is an early write cycle
and the data out pin will remain open circuit (high impedance) throughout the entire cycle; if t
RWD
≥ t
RWD (min), tCWD ≥ tCWD (min), and tAWD ≥ tAWD (min), or tCWD
t
CWD (min), tAWD ≥ tAWD (min) and tCPW
t
CPW (min), the cycle is a read-modify-write and the data output will contain data read from the
selected cell; if neither of the above sets of conditions is satisfied, the condition of the data out
(at access time) is indeterminate.
13. These parameters are referenced to
CAS leading edge in early write cycles and to WE leading
edge in delayed write or read-modify-write cycles.
14. t
RASP defines RAS pulse width in fast page mode cycles.
15. Access time is determined by the longest among t
AA, t CAC and t CPA.
16. The 16M DRAM offers a 16-bit time saving parallel test mode. Address CA0, CA1, CA10 and
CA11 for the 16M
× 1 are don’t care during test mode. Test mode is set by performing a WE-
and-
CAS-before-RAS (WCBR) cycle. In 16-bit parallel test mode, data is written into 16 bits in
parallel at Din and read out from Dout.
If 16 bits are equal (all 1s or 0s), data output pin is a high state during test mode read cycle, then
the device has passed. If they are not equal, data output pin is a low state, then the device has
failed. Refresh during test mode operation can be performed by normal read cycles or by WCBR
refresh cycles.
To get out of test mode and enter a normal operation mode, perform either a regular
CAS-
before-
RAS refresh cycle or RAS-only refresh cycle.
17. In a test mode read cycle, the value of t
RAC, t AA, t CAC and t CPA is delayed by 2 ns to 5 ns for the
specified value. These parameters should be specified in test mode cycles by adding the above
value to the specified value in this data sheet.
18. XXX: H or L (H: V
IH (min) ≤ VIN ≤ VIH (max), L: VIL (min) ≤ VIN ≤ VIL (max))
///////: Invalid Dout


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