TEA1201TS datasheet(4/24 Pages) PHILIPS

Part #	TEA1201TS

Description	0.95 V starting basic power unit

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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4 / 24 page

2002 Jun 06

4

Philips Semiconductors

Product speciﬁcation

0.95 V starting basic power unit

TEA1201TS

5

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC-to-DC converter

UPCONVERSION

VI(up)

input voltage

VI(start)

−

5.50

V

VO(up)

output voltage

VO(uvlo)

−

5.50

V

VI(start)

start-up input voltage

IL < 10 mA

0.93

0.96

1.00

V

VO(uvlo)

undervoltage lockout voltage

2.0

2.2

2.4

V

DOWNCONVERSION

VI(dwn)

input voltage

VO(uvlo)

−

5.50

V

VO(dwn)

output voltage

1.30

−

5.50

V

CURRENT LEVELS

Iq(DCDC)

quiescent current at pin

UPOUT/DNIN

−

110

−µA

Ishdwn

current in shut-down mode

VLBI1 =VI(up) = 1.2 V

−

65

−µA

ILX(max)

maximum continuous current at

pins LX1 and LX2

Tamb =80 °C

−−

1.0

A

∆I

lim

current limit deviation

Ilim set to 1.0 A

upconversion

−12

−

+12

%

downconversion

−12

−

+12

%

POWER MOSFETS

RDSon(N)

drain-to-source on-state

resistance NFET

Tj =27 °C; IDS = 100 mA

−

110

200

m

Ω

RDSon(P)

drain-to-source on-state

resistance PFET

Tj =27 °C; IDS = −100 mA

−

125

250

m

Ω

EFFICIENCY

η

efﬁciency upconversion

VO up to 3.3 V; see Fig.9

VI = 1.2 V; IL = 100 mA

−

84

−

%

VI = 2.4 V; IL =10mA

−

92

−

%

TIMING

fsw

switching frequency

PWM mode

480

600

720

kHz

fi(sync)

synchronization clock input

frequency

6

1320MHz

tstart

start-up time

−

10

−

ms

Switch

RDSon

drain-to-source resistance in

switched-on state

VO(up) =VI(down) =5V;

VFB1 < 0.4 V

−

500

750

m

Ω

IO(max)

maximum output current in

switched-on state

VFB1 < 0.4 V

−−

0.40

A

General characteristics

Vref

reference voltage

1.165

1.190

1.215

V

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