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ISO7721BDW Datasheet(PDF) 16 Page - Texas Instruments

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Part No. ISO7721BDW
Description  High-Speed, Robust EMC, Basic Insulation Dual-Channel Digital Isolator
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Maker  TI1 [Texas Instruments]
Homepage  http://www.ti.com
Logo TI1 - Texas Instruments

ISO7721BDW Datasheet(HTML) 16 Page - Texas Instruments

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ISO7721B
SLLSEY9A – APRIL 2018 – REVISED APRIL 2019
www.ti.com
Product Folder Links: ISO7721B
Submit Documentation Feedback
Copyright © 2018–2019, Texas Instruments Incorporated
(1)
See the Safety-Related Certifications section for detailed isolation ratings.
8.3 Feature Description
The ISO7721B device provides two default output state options to enable a variety of application uses. Table 1
lists the device features of the ISO7721B device.
Table 1. Device Features
PART NUMBER
MAXIMUM DATA
RATE
CHANNEL
DIRECTION
DEFAULT OUTPUT
STATE
PACKAGE
ISOLATION RATING(1)
ISO7721B
100 Mbps
1 Forward, 1 Reverse
High
DW-16
5000 VRMS / 8000 VPK
ISO7721B with F
suffix
100 Mbps
1 Forward, 1 Reverse
Low
DW-16
5000 VRMS / 8000 VPK
8.3.1 Electromagnetic Compatibility (EMC) Considerations
Many applications in harsh industrial environment are sensitive to disturbances such as electrostatic discharge
(ESD), electrical fast transient (EFT), surge and electromagnetic emissions. These electromagnetic disturbances
are regulated by international standards such as IEC 61000-4-x and CISPR 22. Although system-level
performance and reliability depends, to a large extent, on the application board design and layout, the ISO7721B
device incorporates many chip-level design improvements for overall system robustness. Some of these
improvements include:
Robust ESD protection cells for input and output signal pins and inter-chip bond pads.
Low-resistance connectivity of ESD cells to supply and ground pins.
Enhanced performance of high voltage isolation capacitor for better tolerance of ESD, EFT and surge events.
Bigger on-chip decoupling capacitors to bypass undesirable high energy signals through a low impedance
path.
PMOS and NMOS devices isolated from each other by using guard rings to avoid triggering of parasitic
SCRs.
Reduced common mode currents across the isolation barrier by ensuring purely differential internal operation.


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