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KBE00F005A Datasheet(PDF) 81 Page - Samsung semiconductor

Part # KBE00F005A
Description  512Mb NAND*2 256Mb Mobile SDRAM*2
Download  87 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KBE00F005A Datasheet(HTML) 81 Page - Samsung semiconductor

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KBE00F005A-D411
MCP MEMORY
June 2005
81
Revision 1.0
0123
4567
89
10
11
12
13
14
15
16
17
18
19
CKE
CS
RAS
CAS
BA1
A10/AP
ADDR
WE
: Don’t care
CLOCK
Write Interrupted by Precharge Command & Write Burst Stop Cycle @ Full Page Burst,
RAa
Row Active
Write
*NOTE:
1. At full page mode, burst is finished by burst stop or precharge.
2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding
memory cell. It is defined by AC parameter of tRDL.
DQM at write interrupted by precharge command is needed to prevent invalid write.
DQM should mask invalid input data on precharge command cycle when asserting precharge
before end of burst. Input data after Row precharge cycle will be masked internally.
3. Burst stop is valid at every burst length.
BA0
DQM
DQ
CAa
CAb
Burst Stop
HIGH
RAa
DAa3 DAa4
DAb0 DAb1 DAb2 DAb3 DAb4 DAb5
tBDL
*Note 1
tRDL
*Note 1,2
(A-Bank)
(A-Bank)
Write
(A-Bank)
Precharge
(A-Bank)
tRDL=2CLK
DAa2
DAa1
DAa0


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