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DS1265W Datasheet(PDF) 1 Page - Dallas Semiconductor

Part No. DS1265W
Description  3.3V 8Mb Nonvolatile SRAM
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Maker  DALLAS [Dallas Semiconductor]
Homepage  http://www.dalsemi.com
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DS1265W Datasheet(HTML) 1 Page - Dallas Semiconductor

   
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110602
FEATURES
§ 10 years minimum data retention in the
absence of external power
§ Data is automatically protected during power
loss
§ Unlimited write cycles
§ Low-power CMOS operation
§ Read and write access times as fast as 100ns
§ Lithium energy source is electrically
disconnected to retain freshness until power is
applied for the first time
§ Optional industrial (IND) temperature range
of -40
°C to +85°C
PIN ASSIGNMENT
PIN DESCRIPTION
A0–A19
- Address Inputs
DQ0–DQ7
- Data In/Data Out
CE
- Chip Enable
WE
- Write Enable
OE
- Output Enable
VCC
- Power (+3.3V)
GND
- Ground
NC
- No Connect
DESCRIPTION
The DS1265W 8Mb nonvolatile (NV) SRAMs are 8,388,608-bit, fully static, NV SRAMs organized as
1,048,576 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control
circuitry that constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,
the lithium energy source is automatically switched on and write protection is unconditionally enabled to
prevent data corruption. There is no limit on the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor interfacing.
DS1265W
3.3V 8Mb Nonvolatile SRAM
www.maxim-ic.com
13
1
2
3
4
5
6
7
8
9
10
11
12
14
35
36-Pin Encapsulated Package
740mil Extended
A18
A14
A7
A6
A5
A4
A3
A2
A0
A1
VCC
A19
NC
A15
A17
WE
A13
A8
A9
A11
OE
A10
DQ7
CE
36
34
33
32
31
30
29
28
27
26
25
23
24
NC
A16
A12
NC
DQ0
DQ1
15
16
22
21
DQ6
DQ5
17
18
GND
DQ2
DQ3
DQ4
19
20


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