2SC5994 datasheet(2/4 Pages) SANYO

Part #	2SC5994

Description	NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

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Manufacturer	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

2SC5994

No.8035-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gain-Bandwidth Product

fT

VCE=10V, IC=300mA

420

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

9

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=1A, IB=50mA

135

300

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=50mA

0.9

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100µA, RBE=0

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

50

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0

6

V

Turn-ON Time

ton

See specified Test Circuit.

30

ns

Storage Time

tstg

See specified Test Circuit.

330

ns

Fall Time

tf

See specified Test Circuit.

40

ns

Package Dimensions

Switching Time Test Circuit

unit : mm

2038B

1 : Base

2 : Collector

3 : Emitter

SANYO : PCP

1.5

0.5

0.4

3.0

0.75

4.5

1.6

0.4

12

3

1.5

VR

RB

VCC=25V

IC=10IB1= --10IB2=700mA

VBE= --5V

+

50

Ω

INPUT

OUTPUT

RL

470

µF

100

µF

PW=20

µs

IB1

D.C.

≤1%

IB2

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

2.0

1.8

1.6

1.2

1.4

0.8

1.0

0.4

0.6

0.2

0

0.4

0

0.8

1.2

1.6

2.0

0.2

0.6

1.0

1.4

1.8

IT07587

5mA

10mA

15mA

20mA

IB=0

3mA

1mA

2mA

VCE=2V

2.0

1.0

1.6

1.4

1.2

0.6

0.8

0.4

0.2

1.8

0

0.2

0.4

0.6

0.8

1.1

1.0

0.1

0.3

0.5

0.7

0.9

IT07588

25mA

Similar Part No. - 2SC5994

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