CEP60N10 datasheet(3/5 Pages) THINKISEMI

Part #	CEP60N10

Description	60A,100V Heatsink Planar N-Channel Power MOSFET

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	THINKISEMI [Thinki Semiconductor Co., Ltd.]

Direct Link	http://www.thinkisemi.com

Logo

3 / 5 page

http://www.thinkisemi.com.tw/

Page 3/5

Rev.09T

CEP60N10

Ciss

Coss

Crss

2400

2000

1600

1200

800

400

0

5

10

15

20

25

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

2.6

2.2

1.8

1.4

1.0

0.6

0.2

V

GS=10V

I

D=30A

-100

-50

0

50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=250µA

-50

-25

0

25

50

75

100

125

150

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

0.4

0.6

0.8

1.0

10

1

10

0

10

2

1.4

1.2

V

GS=0V

120

100

60

40

20

0

1

4

6

5

3

2

80

V

GS=10,9V

V

GS=5V

V

GS=6V

V

GS=7V

V

GS=8V

80

60

40

20

0

2

4

6

100

8

T

J=125 C

-55 C

25 C

Ciss

Coss

Crss

2400

2000

1600

1200

800

400

0

5

10

15

20

25

VDS, Drain-to-Source Voltage (V)

Figure 1. Output Characteristics

VGS, Gate-to-Source Voltage (V)

Figure 2. Transfer Characteristics

VDS, Drain-to-Source Voltage (V)

Figure 3. Capacitance

TJ, Junction Temperature( C)

Figure 4. On-Resistance Variation

with Temperature

2.6

2.2

1.8

1.4

1.0

0.6

0.2

V

GS=10V

I

D=30A

-100

-50

0

50

100

150

200

TJ, Junction Temperature( C)

Figure 5. Gate Threshold Variation

with Temperature

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

V

DS=VGS

I

D=250µA

-50

-25

0

25

50

75

100

125

150

VSD, Body Diode Forward Voltage (V)

Figure 6. Body Diode Forward Voltage

Variation with Source Current

0.4

0.6

0.8

1.0

10

1

10

0

10

2

1.4

1.2

V

GS=0V

120

100

60

40

20

0

1

4

6

5

3

2

80

V

GS=10,9V

V

GS=5V

V

GS=6V

V

GS=7V

V

GS=8V

80

60

40

20

0

2

4

6

100

8

T

J=125 C

-55 C

25 C

Similar Part No. - CEP60N10

Manufacturer	Part #	Datasheet	Description
Chino-Excel Technology	CEP60N10	97Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor
SHENZHEN DOINGTER SEMIC...	CEP60N10	1Mb / 3P	N-Channel MOSFET uses advanced trench technology
CET-MOS Technology Corp...	CEP60N10	519Kb / 4P	N-Channel Enhancement Mode Field Effect Transistor Rev 4. 2008.Oct.

More results

Similar Description - CEP60N10

Manufacturer	Part #	Datasheet	Description
Thinki Semiconductor Co...	IXTP60N10T	1Mb / 7P	60A,100V Heatsink Trench N-Channel Power MOSFET
	IRFP150A	724Kb / 3P	100V,60A Heatsink N-Channel Type Power MOSFET
	IRFP150N	725Kb / 3P	100V,60A Heatsink N-Channel Type Power MOSFET
	SUP60N10	1Mb / 7P	60A,100V Heatsink Trench N-Channel Power MOSFET
	IRF3710PBF	1Mb / 7P	57A,100V Heatsink Planar N-Channel Power MOSFET
	FQP70N10	1Mb / 7P	57A,100V Heatsink Planar N-Channel Power MOSFET
	FQP55N10	1Mb / 7P	55A,100V Heatsink Planar N-Channel Power MOSFET
Jiangsu Donghai Semicon...	B60N10	719Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET
	E60N10	714Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET
	F60N10	715Kb / 10P	60A 100V N-channel Enhancement Mode Power MOSFET

More results

CEP60N10 Datasheet(PDF) 3 Page - Thinki Semiconductor Co., Ltd.

CEP60N10 Datasheet(HTML) 3 Page - Thinki Semiconductor Co., Ltd.

Similar Part No. - CEP60N10

Similar Description - CEP60N10

Html Pages

1 2 3 4 5

Datasheet Download

Link URL