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SI2303ADS Datasheet(PDF) 4 Page - Vishay Siliconix

Part No. SI2303ADS
Description  P-Channel, 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI2303ADS Datasheet(HTML) 4 Page - Vishay Siliconix

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Si2303ADS
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71837
S-20617—Rev. B, 29-Apr-02
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
TJ = 150_C
0
2
4
6
8
10
0.01
0.10
1.00
10.00
100.00
1000.00
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
VSD – Source-to-Drain Voltage (V)
VGS – Gate-to-Source Voltage (V)
TJ – Temperature (_C)
Time (sec)
0.0
0.2
0.4
0.6
0.8
1.0
0
2468
10
–0.3
–0.2
–0.1
–0.0
0.1
0.2
0.3
0.4
0.5
0.6
–50
–25
0
25
50
75
100
125
150
ID = 1.7 A
ID = 250 mA
10
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
2
1
0.1
0.01
10–4
10–3
10–2
10–1
1
10
600
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = RthJA = 62.5_C/W
3. TJM – TA = PDMZthJA(t)
t1
t2
t1
t2
Notes:
4. Surface Mounted
PDM
0.01
0.1
TJ = 25_C
1
100
TJ = 25_C
Single Pluse


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