NTHS5443T1G datasheet(3/6 Pages) ONSEMI

Part #	NTHS5443T1G

Description	Power MOSFET

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NTHS5443

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TYPICAL ELECTRICAL CHARACTERISTICS

−6 V

125

°C

−1.6 V

0

10

2.5

8

6

3

1.5

1

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

4

2

0

0.5

Figure 1. On−Region Characteristics

0.5

10

8

2

1.5

2.5

6

4

2

1

0

3

Figure 2. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.05

24

0.15

0.1

0

6

Figure 3. On−Resistance versus

Gate−to−Source Voltage

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

19

10

8

5

0.06

4

0.04

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

−ID, DRAIN CURRENT (AMPS)

−50

0

−25

25

1.4

1.2

1

0.8

0.6

50

125

100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

VGS = −1.4 V

0.2

13

TJ = −55°C

ID = −3.6 A

TJ = 25°C

0.08

0.02

75

150

TJ = 25°C

ID = −3.6 A

VGS = −4.5 V

2

25

°C

1.6

VGS = −4.5 V

VGS = −6 V

−1.8 V

−2 V

−2.2 V

−2.4 V

−3.4 V

−5 V

−4 V

−2.8 V

−2.6 V

VDS ≥ −10 V

05

7

6

23

04

8

1000

100

10

20

16

Figure 6. Drain−to−Source Leakage Current

versus Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

12

VGS = 0 V

10,000

TJ = 150°C

TJ = 100°C

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