Integrated Silicon Solution, Inc. — 1-800-379-4774
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
• High-speed access time: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
µW (typical) CMOS standby
— 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh
• TTL compatible inputs and outputs
• Single 5V power supply
ISSI IS61C256AH is a very high-speed, low power,
32,768 word by 8-bit static RAMs. They are fabricated using
ISSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design tech-
niques, yields access times as fast as 10 ns maximum.
CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (
CE) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (
WE) controls both writing
and reading of the memory.
The IS61C256AH is pin compatible with other 32K x 8 SRAMs
and are available in 28-pin PDIP, SOJ, and TSOP (Type I)
32K x 8 HIGH-SPEED CMOS STATIC RAM
FUNCTIONAL BLOCK DIAGRAM
32K X 8