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ESD9N12V-2/TR Datasheet(PDF) 4 Page - Will Semiconductor Ltd. |
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ESD9N12V-2/TR Datasheet(HTML) 4 Page - Will Semiconductor Ltd. |
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4 / 7 page  ESD9N12V Will Semiconductor Ltd. 4 Revision 1.0, 2017/5/16 Typical characteristics (TA=25oC, unless otherwise noted) 8/20μs waveform per IEC61000-4-5 Clamping voltage vs. Peak pulse current Non-repetitive peak pulse power vs. Pulse time Contact discharge current waveform per IEC61000-4-2 Capacitance vs. Reverse voltage Power derating vs. Ambient temperature 0 1 2 3 4 5 6 7 16 18 20 22 24 Pulse waveform: t p = 8/20μs I PP - Peak pulse current (A) 0 5 10 15 20 25 30 0 100 90 50 10 T 2 T 1 Front time: T 1= 1.25 T = 8μs Time to half-value: T 2= 20μs Time (μs) T t 60ns 30ns t r = 0.7~1ns 10 90 100 Time (ns) 0 25 50 75 100 125 150 0 20 40 60 80 100 T A - Ambient temperature ( oC) 1 10 100 1000 0.1 1 10 Pulse time (s) 0 2 4 6 8 10 12 5 10 15 20 25 30 f = 1MHz V AC = 50mV V R - Reverse voltage (V) |
Similar Part No. - ESD9N12V-2/TR |
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Similar Description - ESD9N12V-2/TR |
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