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06035J0R7ABSTR Datasheet(PDF) 1 Page - TriQuint Semiconductor

Part # 06035J0R7ABSTR
Description  Edge QAM Gain Stage
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Manufacturer  TRIQUINT [TriQuint Semiconductor]
Direct Link  http://www.triquint.com
Logo TRIQUINT - TriQuint Semiconductor

06035J0R7ABSTR Datasheet(HTML) 1 Page - TriQuint Semiconductor

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TAT7472A1F
CATV 75
Ω pHEMT Dual RF Amplifier
Datasheet: Rev D 06-08-15
- 1 of 9 -
Disclaimer: Subject to change without notice
© 2014 TriQuint
www.triquint.com
SOIC-8 Package
Applications
 Edge QAM Gain Stage
 MDU Output
 RF Distribution Amplifiers
 AH22 Replacement
Product Features
 75 Ω, 50 MHz to 1218 MHz Bandwidth
 Low Noise Figure: < 3 dB
 pHEMT Device Technology
 SOIC-8 Package
 Enhanced Gain and Bandwidth
 Adjustable Bias
Functional Block Diagram
1
2
3
4
8
7
6
5
RF
OUT / VDD A
N/C
N/C
RF
OUT / VDD B
RF
IN / VG A
N/C
N/C
RF
IN / VG B
Backside Pad - RF/DC GND
Pin 1 Reference Mark
A
B
Pin Configuration
Pin No.
Label
1
RFIN
 / VG A
2, 3, 6, 7
GND
4
RFIN /
 VG B
5
RFOUT
 / VDD B
8
RFOUT
 / VDD A
Backside Pad
RF/DC GND
General Description
The TAT7472A1F
is a 75 Ω RF Amplifier designed for
CATV use, but capable of operation up to 1218
 MHz.
The TAT7472 A1F contains two separate amplifiers for
push pull applications. It is fabricated using 6-inch GaAs
pHEMT technology to optimize performance and cost.
Each amplifier contains on-chip active biasing. The bias
current set point of each amplifier is adjustable with a
single resistor from the input to ground.
Typical supply voltage is +5
 V, IMD performance and
bandwidth can be enhanced with +5.5
 V and +6 V
operation.
Ordering Information
Part No.
Description
TAT7472A1F
75
 Ω Dual pHEMT Amplifier
TAT7472A1F-EB
50
 – 1218 MHz Evaluation Board
Standard T/R size = 1000 pieces on a 7
” reel.
GND
GND
GND
GND


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