IKW15T120 datasheet(4/15 Pages) INFINEON

Part #	IKW15T120

Description	LOW LOSS DUOPACK : IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EMCON HE DIODE

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Manufacturer	INFINEON [Infineon Technologies AG]

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IKW15T120

^

TrenchStop Series

Power Semiconductors

4

Preliminary / Rev. 1 Jul-02

Switching Characteristic, Inductive Load,

at Tj=150 °C

Value

Parameter

Symbol

Conditions

min.

typ.

max.

Unit

IGBT Characteristic

Turn-on delay time

t d( o n)

-50

-

Rise time

t r

-35

-

Turn-off delay time

t d( of f)

-

600

-

Fall time

t f

-

120

-

ns

Turn-on energy

Eon

-2.0

-

Turn-off energy

Eoff

-2.1

-

Total switching energy

Ets

T j =150° C,

VCC =600V, IC =15A,

VGE =- 15 /15V,

R G = 5 6Ω

L σ

1) =180nH,

C σ

1) =39pF

Energy losses include

“tail” and diode

reverse recovery.

-4.1

-

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time

t rr

-

330

-

ns

Diode reverse recovery charge

Q rr

-3.4

-

µC

Diode peak reverse recovery current

I rr m

-21

-

A

Diode peak rate of fall of reverse

recovery current during tb

dirr /d t

T j =150° C

VR =600 V, IF =15A,

diF/dt =600A/ µs

-

190

-

A/

µs

1) Leakage inductance Lσ and Stray capacity Cσ due to dynamic test circuit in Figure E.

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