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IRF6621 Datasheet(PDF) 3 Page - International Rectifier

Part No. IRF6621
Description  The IRF6621 combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6621 Datasheet(HTML) 3 Page - International Rectifier

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IRF6621
www.irf.com
3
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 
 Surface mounted on 1 in. square Cu board, steady state.
‚ Used double sided cooling , mounting pad.
ƒ Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Notes:
„ TC measured with thermocouple incontact with top (Drain) of part.
… Rθ is measured at TJ of approximately 90°C.
 Surface mounted on 1 in. square Cu (still
air).
ƒ Mounted to a PCB with
small clip heatsink (still air)
ƒ Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
1
10
100
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Ri (°C/W)
τi (sec)
1.6195
0.000126
2.1406
0.001354
22.2887
0.375850
20.0457
7.410000
11.9144
99
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci=
τi/Ri
Ci=
τi/Ri
τ
τ
C
τ
4
τ
4
R
4
R
4
τ
5
τ
5
R
5
R
5
A
Absolute Maximum Ratings
Parameter
Units
PD @TA = 25°C
Power Dissipation
™
W
PD @TA = 70°C
Power Dissipation
™
PD @TC = 25°C
Power Dissipation
f
TP
Peak Soldering Temperature
°C
TJ
Operating Junction and
TSTG
Storage Temperature Range
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
Junction-to-Ambient
™g
–––
58
RθJA
Junction-to-Ambient
dg
12.5
–––
RθJA
Junction-to-Ambient
eg
20
–––
°C/W
RθJC
Junction-to-Case
fg
–––
3.0
RθJ-PCB
Junction-to-PCB Mounted
1.0
–––
Linear Derating Factor
™Ã
W/°C
1.4
0.017
270
-40 to + 150
Max.
42
2.2


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