 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
BUF7216 Datasheet(PDF) 3 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
BUF7216 Datasheet(HTML) 3 Page - Vishay Siliconix |
|
|
3 / 8 page 
BUF7216 Vishay Telefunken www.vishay.de • FaxBack +1-408-970-5600 Rev. 1, 20–Jan–99 3 (8) Document Number 86520 Switching Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Symbol Min Typ Max Unit Resistive load (figure 2) Fall time IC = 0.4 A; IB1 = 50 mA; –IB2 = 0.4 mA; VS = 250 V tf 0.65 0.95 ms Turn on time IC = 0.35 A; IB1 = 85 mA; ton 0.25 0.5 ms Storage time C B1 –IB2 = 175 mA; VS = 250 V ts 3.5 4.5 ms Fall time tf 0.25 0.35 ms Turn on time IC = 1 A; IB1 = 0.2 A; ton 0.4 0.7 ms Storage time C B1 –IB2 = 0.5 A; VS = 250 V ts 3 4 ms Fall time tf 0.2 0.3 ms Inductive load (figure 3) Storage time IC = 0.35 A; IB1 = 85 mA; I 175 mA; V 300 V; ts 3.2 4.5 ms Fall time –IB2 = 175 mA; Vclamp = 300 V; L = 200 mH; –VBE = 5 V tf 0.2 0.25 ms Storage time IC = 1 A; IB1 = 0.2 A; I 0 5 A; V 300 V; ts 3 3.5 ms Fall time –IB2 = 0.5 A; Vclamp = 300 V; L = 200 mH; –VBE = 5 V tf 0.1 0.15 ms + 3 Pulses 94 8863 tp T + 0.1 tp + 10 ms V S2 + 10 V I B w I C 5 IC LC V S1 + V(BR)CEO I(BR)R 100 m W IC VCE V(BR)CEO Imeasure 0to30V Figure 1. Test circuit for V(BR)CE0 |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
