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BUF7216 Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. BUF7216
Description  Silicon NPN High Voltage Switching Transistor
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BUF7216 Datasheet(HTML) 2 Page - Vishay Siliconix

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BUF7216
Vishay Telefunken
www.vishay.de
• FaxBack +1-408-970-5600
Rev. 1, 20–Jan–99
2 (8)
Document Number 86520
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Collector cut-off current
VCES = 1600 V
ICES
100
mA
VCES = 1600 V; Tcase = 125°C
ICES
1
mA
VCBO = 1600 V
ICBO
100
mA
VCBO = 1600 V; Tcase = 125°C
ICBO
1
mA
Collector-emitter
breakdown voltage (figure 1)
IC = 300 mA; L = 125 mH;
Imeasure = 100 mA
V(BR)CEO
800
V
Emitter cut-off current
VEB = 11 V
IEBO
1
mA
Collector-emitter
IC = 0.35 A; IB = 85 mA
VCEsat
0.35
0.6
V
saturation voltage
IC = 1 A; IB = 0.35 A
VCEsat
1.2
V
Base-emitter saturation voltage
IC = 0.35 A; IB = 85 mA
VBEsat
1
V
g
IC = 1 A; IB = 0.35 A
VBEsat
1.1
V
DC forward current transfer ratio
VCE = 2 V; IC = 10 mA
hFE
15
VCE = 2 V; IC = 0.4 A
hFE
15
VCE = 2 V; IC = 1 A
hFE
7
VCE = 5 V; IC = 2 A
hFE
4
Dynamic saturation voltage
IC = 1 A; IB = 0.35 A; t = 1 ms
VCEsatdyn
10
15
V
yg
IC = 1 A; IB = 0.35 A; t = 3 ms
VCEsatdyn
7
10
V


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